| Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates K Itaya, M Onomura, J Nishio, L Sugiura, S Saito, M Suzuki, J Rennie, ... Japanese journal of applied physics 35 (10B), L1315, 1996 | 298 | 1996 |
| Power electronics device applications of diamond semiconductors S Koizumi, H Umezawa, J Pernot, M Suzuki Woodhead publishing, 2018 | 153 | 2018 |
| Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD M Suzuki, J Nishio, M Onomura, C Hongo Journal of crystal growth 189, 511-515, 1998 | 125 | 1998 |
| Semiconductor light emitting device H Sugawara, M Ishikawa, Y Kokubun, Y Nishikawa, S Naritsuka, K Itaya, ... US Patent 5,153,889, 1992 | 99 | 1992 |
| Synthesis of a closely packed carbon nanotube forest by a multi-step growth method using plasma-based chemical vapor deposition Y Yamazaki, M Katagiri, N Sakuma, M Suzuki, S Sato, M Nihei, M Wada, ... Applied physics express 3 (5), 055002, 2010 | 80 | 2010 |
| Electrical characterization of diamond Pi N diodes for high voltage applications M Suzuki, T Sakai, T Makino, H Kato, D Takeuchi, M Ogura, H Okushi, ... physica status solidi (a) 210 (10), 2035-2039, 2013 | 70 | 2013 |
| Semiconductor laser and method of fabricating same G Hatakoshi, M Onomura, J Rennie, M Ishikawa, S Nunoue, M Suzuki US Patent 6,031,858, 2000 | 68 | 2000 |
| Nitride system semiconductor device with oxygen L Sugiura, M Suzuki, K Itaya, H Fujimoto, J Nishio, J Rennie, H Sugawara US Patent 5,932,896, 1999 | 67 | 1999 |
| Low-temperature thermionic emission from nitrogen-doped nanocrystalline diamond films on n-type Si grown by MPCVD M Suzuki, T Ono, N Sakuma, T Sakai Diamond and Related Materials 18 (10), 1274-1277, 2009 | 66 | 2009 |
| Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition M Suzuki, Y Nishikawa, M Ishikawa, Y Kokubun Journal of crystal growth 113 (1-2), 127-130, 1991 | 63 | 1991 |
| Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes M Suzuki, H Yoshida, N Sakuma, T Ono, T Sakai, S Koizumi Applied physics letters 84 (13), 2349-2351, 2004 | 61 | 2004 |
| Electrical characteristics of n‐type diamond Schottky diodes and metal/diamond interfaces M Suzuki, S Koizumi, M Katagiri, T Ono, N Sakuma, H Yoshida, T Sakai, ... physica status solidi (a) 203 (12), 3128-3135, 2006 | 59 | 2006 |
| -type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition L Sugiura, M Suzuki, J Nishio Applied physics letters 72 (14), 1748-1750, 1998 | 57 | 1998 |
| n‐Type doping of diamond S Koizumi, M Suzuki physica status solidi (a) 203 (13), 3358-3366, 2006 | 56 | 2006 |
| Semiconductor laser diode M Onomura, M Suzuki, M Ishikawa US Patent 6,873,634, 2005 | 53 | 2005 |
| Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN K Itaya, H Fujimoto, J Nishio, M Suzuki, L Sugiura US Patent 5,903,017, 1999 | 50 | 1999 |
| Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan K Itaya, H Fujimoto, J Nishio, M Suzuki, L Sugiura US Patent 6,147,364, 2000 | 43 | 2000 |
| Reduction of residual oxygen incorporation and deep levels by substrate misorientation in InGaAlP alloys M Suzuki, K Itaya, Y Nishikawa, H Sugawara, M Okajima Journal of crystal growth 133 (3-4), 303-308, 1993 | 43 | 1993 |
| Discharge electrode implemented by a wide bandgap semiconductor and a discharge lamp using the same T Sakai, T Ono, N Sakuma, M Suzuki, H Yoshida US Patent 7,348,718, 2008 | 39 | 2008 |
| Diamond for Electronics: Materials, Processing and Devices GAPV Daniel Araujo,Mariko Suzuki, Fernando Lloret Materials 14 (22), 7081, 2021 | 37* | 2021 |
