| Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons R Rengel, E Pascual, MJ Martín Applied Physics Letters 104 (23), 2014 | 56 | 2014 |
| Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene JM Iglesias, MJ Martín, E Pascual, R Rengel Applied Physics Letters 108 (4), 2016 | 31 | 2016 |
| Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches R Rengel, E Pascual, MJ Martin IEEE electron device letters 28 (2), 171-173, 2007 | 21 | 2007 |
| Experiences on the design, creation, and analysis of multimedia content to promote active learning R Rengel, E Pascual, I Íñiguez-de-la-Torre, MJ Martín, BG Vasallo Journal of Science Education and Technology 28, 445-451, 2019 | 19 | 2019 |
| Carrier-carrier and carrier-phonon interactions in the dynamics of photoexcited electrons in graphene JM Iglesias, MJ Martín, E Pascual, R Rengel Journal of Physics: Conference Series 647 (1), 012003, 2015 | 17 | 2015 |
| RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs MJ Martin, E Pascual, R Rengel Solid-state electronics 73, 64-73, 2012 | 17 | 2012 |
| Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research E Pascual, MJ Martín, R Rengel, G Larrieu, E Dubois Semiconductor science and technology 24 (2), 025022, 2009 | 17 | 2009 |
| Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena E Pascual, R Rengel, MJ Martín Semiconductor science and technology 22 (9), 1003, 2007 | 16 | 2007 |
| Monte Carlo study of dopant-segregated Schottky barrier SoI MOSFETs: Enhancement of the RF performance MJ Martin-Martinez, C Couso, E Pascual, R Rengel IEEE Transactions on Electron Devices 61 (12), 3955-3961, 2014 | 12 | 2014 |
| Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene JM Iglesias, MJ Martín, E Pascual, R Rengel Applied Surface Science 424, 52-57, 2017 | 11 | 2017 |
| Effect of charged impurity scattering on the electron diffusivity and mobility in graphene R Rengel, JM Iglesias, E Pascual, MJ Martin Journal of Physics: Conference Series 647 (1), 012046, 2015 | 8 | 2015 |
| Electronic transport and noise characterization in MoS2 E Pascual, JM Iglesias, MJ Martín, R Rengel Semiconductor Science and Technology 35 (5), 055021, 2020 | 7 | 2020 |
| Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene JM Iglesias, R Rengel, E Pascual, MJ Martín Journal of Physics D: Applied Physics 50 (30), 305101, 2017 | 6 | 2017 |
| A balance equations approach for the study of the dynamic response and electronic noise in graphene R Rengel, JM Iglesias, E Pascual, MJ Martín Journal of Applied Physics 121 (18), 2017 | 5 | 2017 |
| Noise temperature in graphene at high frequencies R Rengel, JM Iglesias, E Pascual, MJ Martín Semiconductor Science and Technology 31 (7), 075001, 2016 | 5 | 2016 |
| A Monte Carlo investigation of carrier transport in fabricated back‐to‐back Schottky diodes: Influence of direct quantum tunnelling and temperature E Pascual, R Rengel, N Reckinger, X Tang, V Bayot, E Dubois, MJ Martín physica status solidi c 5 (1), 119-122, 2008 | 5 | 2008 |
| Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides R Rengel, Ó Castelló, E Pascual, MJ Martín, JM Iglesias Journal of Physics D: Applied Physics 53 (39), 395102, 2020 | 4 | 2020 |
| Interband scattering-induced ambipolar transport in graphene JM Iglesias, E Pascual, MJ Martín, R Rengel Semiconductor Science and Technology 34 (6), 065011, 2019 | 4 | 2019 |
| Monte Carlo investigation of noise and high-order harmonic extraction in graphene JM Iglesias, E Pascual, R Rengel Semiconductor Science and Technology 33 (12), 124012, 2018 | 4 | 2018 |
| Modelado de estructuras Schottky y de transistores MOSFET con contactos de fuente y drenador metálicos para aplicaciones de alta frecuencia E Pascual Modelado de estructuras Schottky y de transistores MOSFET con contactos de …, 2010 | 4 | 2010 |
Raul RengelUniversidad de SalamancaVerified email at usal.es
