| Ion-beam-induced amorphization and recrystallization in silicon L Pelaz, LA Marqués, J Barbolla Journal of applied physics 96 (11), 5947-5976, 2004 | 478 | 2004 |
| Ion-beam processing of silicon at keV energies: A molecular-dynamics study MJ Caturla, TD de La Rubia, LA Marques, GH Gilmer Physical Review B 54 (23), 16683, 1996 | 296 | 1996 |
| Stability of defects in crystalline silicon and their role in amorphization LA Marqués, L Pelaz, J Hernández, J Barbolla, GH Gilmer Physical Review B 64 (4), 045214, 2001 | 163 | 2001 |
| Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial LA Marqués, L Pelaz, P Castrillo, J Barbolla Physical Review B—Condensed Matter and Materials Physics 71 (8), 085204, 2005 | 100 | 2005 |
| Atomistic modeling of amorphization and recrystallization in silicon L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer Applied physics letters 82 (13), 2038-2040, 2003 | 90 | 2003 |
| Microscopic description of the irradiation-induced amorphization in silicon LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla Physical review letters 91 (13), 135504, 2003 | 86 | 2003 |
| Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study LA Marqués, MJ Caturla, T Díaz de la Rubia, GH Gilmer Journal of applied physics 80 (11), 6160-6169, 1996 | 63 | 1996 |
| Modeling of damage generation mechanisms in silicon at energies below the displacement threshold I Santos, LA Marqués, L Pelaz Physical Review B—Condensed Matter and Materials Physics 74 (17), 174115, 2006 | 58 | 2006 |
| Front-end process modeling in silicon L Pelaz, LA Marqués, M Aboy, P López, I Santos The European Physical Journal B 72, 323-359, 2009 | 49 | 2009 |
| Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ... Applied physics letters 83 (20), 4166-4168, 2003 | 45 | 2003 |
| Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy Journal of applied physics 97 (10), 2005 | 43 | 2005 |
| The laser annealing induced phase transition in silicon: a molecular dynamics study LA Marqués, L Pelaz, M Aboy, J Barbolla Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 39 | 2004 |
| Characterization of octadecaborane implantation into Si using molecular dynamics LA Marqués, L Pelaz, I Santos, VC Venezia Physical Review B—Condensed Matter and Materials Physics 74 (20), 201201, 2006 | 36 | 2006 |
| Atomistic analysis of defect evolution and transient enhanced diffusion in silicon M Aboy, L Pelaz, LA Marqués, L Enriquez, J Barbolla Journal of applied physics 94 (2), 1013-1018, 2003 | 33 | 2003 |
| An improved molecular dynamics scheme for ion bombardment simulations LA Marques, JE Rubio, M Jaraiz, L Enriquez, J Barbolla Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 33 | 1995 |
| Molecular dynamics simulations of damage production by thermal spikes in Ge P López, L Pelaz, I Santos, LA Marqués, M Aboy Journal of Applied Physics 111 (3), 2012 | 32 | 2012 |
| The curious case of thin-body Ge crystallization R Duffy, M Shayesteh, B McCarthy, A Blake, M White, J Scully, R Yu, ... Applied Physics Letters 99 (13), 2011 | 32 | 2011 |
| Improved atomistic damage generation model for binary collision simulations I Santos, LA Marqués, L Pelaz, P López Journal of Applied Physics 105 (8), 2009 | 32 | 2009 |
| Modeling of defects, dopant diffusion and clustering in silicon M Aboy, I Santos, L Pelaz, LA Marqués, P López Journal of Computational Electronics 13, 40-58, 2014 | 30 | 2014 |
| Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects LA Marqués, L Pelaz, P López, I Santos, M Aboy Physical Review B—Condensed Matter and Materials Physics 76 (15), 153201, 2007 | 28 | 2007 |
Lourdes PelazUniversity of ValladolidVerified email at ele.uva.es
