| Status and prospects for SiC power MOSFETs JA Cooper, MR Melloch, R Singh, A Agarwal, JW Palmour IEEE Transactions on Electron Devices 49 (4), 658-664, 2002 | 566 | 2002 |
| Reliability and performance limitations in SiC power devices R Singh Microelectronics reliability 46 (5-6), 713-730, 2006 | 326 | 2006 |
| SiC power Schottky and PiN diodes R Singh, JA Cooper, MR Melloch, TP Chow, JW Palmour IEEE Transactions on Electron Devices 49 (4), 665-672, 2002 | 297 | 2002 |
| Silicon carbide metal-insulator semiconductor field effect transistor R Singh, JW Palmour US Patent 5,719,409, 1998 | 274 | 1998 |
| 1800 V NPN bipolar junction transistors in 4H-SiC SH Ryu, AK Agarwal, R Singh, JW Palmour IEEE Electron Device Letters 22 (3), 124-126, 2001 | 233 | 2001 |
| SiC power diodes provide breakthrough performance for a wide range of applications AR Hefner, R Singh, JS Lai, DW Berning, S Bouche, C Chapuy IEEE Transactions on Power Electronics 16 (2), 273-280, 2001 | 188 | 2001 |
| 12-19 kV 4H-SiC pin diodes with low power loss Y Sugawara, D Takayama, K AsanO, R Singh, J Palmour, T Hayashi Proceedings of the 13th International Symposium on Power Semiconductor …, 2001 | 159 | 2001 |
| Progress in SiC: from material growth to commercial device development CH Carter Jr, VF Tsvetkov, RC Glass, D Henshall, M Brady, M St G, ... Materials Science and Engineering: B 61, 1-8, 1999 | 153 | 1999 |
| Reliability of SiC MOS devices R Singh, AR Hefner Solid-State Electronics 48 (10-11), 1717-1720, 2004 | 129 | 2004 |
| Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field … SH Ryu, A Agarwal, MK Das, LA Lipkin, JW Palmour, R Singh US Patent 6,956,238, 2005 | 120 | 2005 |
| Latch-up free power MOS-bipolar transistor R Singh, JW Palmour US Patent 6,121,633, 2000 | 113 | 2000 |
| Silicon carbide for power devices JW Palmour, R Singh, RC Glass, O Kordina, CH Carter Proceedings of 9th International Symposium on Power Semiconductor Devices …, 1997 | 110 | 1997 |
| High-power 4H-SiC JBS rectifiers R Singh, DC Capell, AR Hefner, J Lai, JW Palmour IEEE Transactions on Electron Devices 49 (11), 2054-2063, 2002 | 106 | 2002 |
| " Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes ME Levinshtein, TT Mnatsakanov, P Ivanov, JW Palmour, SL Rumyantsev, ... IEEE Transactions on Electron Devices 48 (8), 1703-1710, 2001 | 104 | 2001 |
| Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator TR McNutt, AR Hefner, HA Mantooth, J Duliere, DW Berning, R Singh IEEE Transactions on Power Electronics 19 (3), 573-581, 2004 | 92 | 2004 |
| Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same R Singh US Patent 6,673,662, 2004 | 86 | 2004 |
| Large area, ultra-high voltage 4H-SiC pin rectifiers R Singh, KG Irvine, DC Capell, JT Richmond, D Berning, AR Hefner, ... IEEE Transactions on Electron Devices 49 (12), 2308-2316, 2002 | 85 | 2002 |
| 3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC SH Ryu, AK Agarwal, R Singh, JW Palmour IEEE Electron Device Letters 22 (3), 127-129, 2001 | 85 | 2001 |
| The charged particle response of silicon carbide semiconductor radiation detectors FH Ruddy, AR Dulloo, JG Seidel, JW Palmour, R Singh Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003 | 82 | 2003 |
| Progress in the industrial production of SiC substrates for semiconductor devices M St G, RC Glass, HM Hobgood, VF Tsvetkov, M Brady, D Henshall, ... Materials Science and Engineering: B 80 (1-3), 327-331, 2001 | 82 | 2001 |
Siddarth SundaresanGeneSiC Semiconductor, George Mason UniversityDirección de correo verificada de genesicsemi.com
