Segueix
Sebastia Bota
Sebastia Bota
Associate Prof., Physics Dept., Universitat de les Illes Balears
Correu electrònic verificat a uib.es
Títol
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The LHCb detector at the LHC
AA Alves Jr, LM Andrade Filho, AF Barbosa, I Bediaga, G Cernicchiaro, ...
Journal of instrumentation 3 (08), S08005, 2008
44572008
The LHCb Detector at LHC
A Augusto Alves Jr, LM Andrade Filho, AF Barbosa, I Bediaga, ...
Journal of Instrumentation 3 (8), 1-205, 2008
1062008
A 65-nm reliable 6T CMOS SRAM cell with minimum size transistors
G Torrens, B Alorda, C Carmona, D Malagon-Perianez, J Segura, S Bota
IEEE Transactions on Emerging Topics in Computing 7 (3), 447-455, 2017
412017
Analytical modeling of single event transients propagation in combinational logic gates
X Gili, S Barcelo, J Segura
IEEE Transactions on Nuclear Science 59 (4), 971-979, 2012
372012
Impact of thermal gradients on clock skew and testing
SA Bota, JL Rossello, C De Benito, A Keshavarzi, J Segura
IEEE Design & Test of Computers 23 (5), 414-424, 2006
372006
A reusable smart interface for gas sensor resistance measurement
JL Merino, SA Bota, R Casanova, A Diéguez, C Cané, J Samitier
IEEE Transactions on Instrumentation and Measurement 53 (4), 1173-1178, 2004
342004
A current-mode interface circuit for a piezoresistive pressure sensor
J Samitier, M Puig-Vidal, SA Bota, C Rubio, SK Siskos, T Laopoulos
IEEE Transactions on Instrumentation and Measurement 47 (3), 708-710, 1998
321998
Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
B Garrido, J Samitier, S Bota, JA Moreno, J Montserrat, JR Morante
Journal of applied physics 81 (1), 126-134, 1997
311997
8T vs. 6T SRAM cell radiation robustness: A comparative analysis
B Alorda, G Torrens, S Bota, J Segura
Microelectronics reliability 51 (2), 350-359, 2011
302011
Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources
D Malagón, SA Bota, G Torrens, X Gili, J Praena, B Fernández, M Macías, ...
Microelectronics Reliability 78, 38-45, 2017
282017
Structural damage and defects created in SiO2 films by Ar ion implantation
B Garrido, J Samitier, S Bota, C Dominguez, J Montserrat, JR Morante
Journal of non-crystalline solids 187, 101-105, 1995
281995
Adaptive static and dynamic noise margin improvement in minimum-sized 6T-SRAM cells
B Alorda, G Torrens, S Bota, J Segura
Microelectronics Reliability 54 (11), 2613-2620, 2014
272014
Static and dynamic stability improvement strategies for 6T CMOS low-power SRAMs
B Alorda, G Torrens, S Bota, J Segura
2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010 …, 2010
272010
A simple CMOS chaotic integrated circuit
JL Rosselló, V Canals, I De Paul, S Bota, A Morro
IEICE Electronics Express 5 (24), 1042-1048, 2008
262008
Smart temperature sensor for thermal testing of cell-based ICs
SA Bota, M Rosales, JL Rosselló, J Segura
Design, Automation and Test in Europe, 464-465, 2005
262005
A compact temperature sensor for a 1.0 μm CMOS technology using lateral pnp transistors
E Montané, SA Bota, J Samitier
Microelectronics journal 29 (4-5), 277-281, 1998
261998
Within die thermal gradient impact on clock-skew: A new type of delay-fault mechanism
SA Bota, M Rosales, JL Rosello, A Keshavarzi, J Segura
2004 International Conferce on Test, 1276-1283, 2004
252004
A 128/spl times/128 CMOS image sensor with analog memory for synchronous image capture
G Chapinal, SA Bota, M Moreno, J Palacin, A Herms
IEEE Sensors Journal 2 (2), 120-127, 2002
252002
Design hardening of nanometer SRAMs through transistor width modulation and multi-Vt combination
G Torrens, B Alorda, S Barceló, JL Rosselló, SA Bota, J Segura
IEEE Transactions on Circuits and Systems II: Express Briefs 57 (4), 280-284, 2010
232010
Application of predictive oscillation-based test to a CMOS opamp
K Suenaga, E Isern, R Picos, S Bota, M Roca, E García-Moreno
IEEE Transactions on Instrumentation and Measurement 59 (8), 2076-2082, 2009
212009
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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