Arnaud Bournel

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Coautores

Philippe DollfusCNRS, Université Paris-Sud, Université Paris-SaclayDirección de correo verificada de u-psud.fr
Jerome Saint-MartinParis Saclay UniversityDirección de correo verificada de universite-paris-saclay.fr
Damien QuerliozResearch Scientist, CNRS, Université Paris-SaclayDirección de correo verificada de u-psud.fr
Viet-Hung NguyenUniversité catholique de Louvain, Louvain-la-Neuve, BelgiumDirección de correo verificada de uclouvain.be
Weisheng ZhaoFert Beijing Institute, Beihang UniversityDirección de correo verificada de buaa.edu.cn
Karim HuetSCREEN Semiconductor Solutions Co., Ltd.Dirección de correo verificada de screen-lasse.com
V. Nam DoAssociate Professor, Phenikaa UniversityDirección de correo verificada de phenikaa-uni.edu.vn
Sylvain BARRAUDCEA-LETI, Minatec CampusDirección de correo verificada de cea.fr
Yue Zhang (张悦)Associate Professor, Beihang University, Beijing, ChinaDirección de correo verificada de u-psud.fr
Fulvio MazzamutoField Application Manager, LASSE SCREENDirección de correo verificada de screen-lasse.com
Jacques-Olivier KLEINProfessor, Univ. Paris-Saclay, FranceDirección de correo verificada de universite-paris-saclay.fr
Jiaqi ZhouUCLouvainDirección de correo verificada de uclouvain.be
Salim BERRADAIntel CorporationDirección de correo verificada de intel.com
Guillaume HubertONERA, the French Aerospace Lab.Dirección de correo verificada de onera.fr
Patrick BrunoESRF, Grenoble, FranceDirección de correo verificada de esrf.fr
Moncef SaidUniversité de Monsatir, Faculté des Sciences, LMCNDirección de correo verificada de fsm.rnu.tn
Xiaoyang LinBeihang UniversityDirección de correo verificada de buaa.edu.cn
Sylvain GIRARDProfessor, Université de Saint-Etienne, Laboratoire Hubert Curien, FranceDirección de correo verificada de univ-st-etienne.fr
Herve JaouenSTMicroelectronicsDirección de correo verificada de st.com
Yann-Michel NiquetCEA/IRIG/MEM/L_SimDirección de correo verificada de cea.fr

Arnaud Bournel

Université Paris-Sud

Dirección de correo verificada de u-psud.fr - Página principal

Electronics CMOS Graphene Spintronics


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ... Applied Physics Letters 92 (4), 042108, 2008	135	2008
On the ballistic transport in nanometer-scaled DG MOSFETs J Saint Martin, A Bournel, P Dollfus IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004	128	2004
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures VN Do, VH Nguyen, P Dollfus, A Bournel Journal of Applied Physics 104 (6), 063708-063708-7, 2008	87	2008
Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node M Raine, G Hubert, M Gaillardin, L Artola, P Paillet, S Girard, ... IEEE Transactions on Nuclear Science 58 (3), 840-847, 2011	84	2011
On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ... IEEE Transactions on Electron Devices 54 (9), 2232-2242, 2007	82	2007
Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas A Bournel, P Dollfus, P Bruno, P Hesto European Physical Journal-Applied Physics 4 (1), 1-4, 1998	82	1998
Resonant tunnelling diodes based on graphene/h-BN heterostructure VH Nguyen, F Mazzamuto, A Bournel, P Dollfus Journal of Physics D: Applied Physics 45 (32), 325104, 2012	78	2012
Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto IEEE Transactions on Electron Devices 51 (5), 749-756, 2004	77	2004
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus Semiconductor science and technology 21 (4), L29, 2006	73	2006
Controllable spin-dependent transport in armchair graphene nanoribbon structures VH Nguyen, VN Do, A Bournel, VL Nguyen, P Dollfus Journal of Applied Physics 106 (5), 053710-053710-7, 2009	67	2009
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation J Saint-Martin, A Bournel, P Dollfus Solid-State Electronics 50 (1), 94-101, 2006	63	2006
A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach D Querlioz, J Saint-Martin, VN Do, A Bournel, P Dollfus IEEE Transactions on Nanotechnology 5 (6), 737-744, 2006	54	2006
Current-limiting challenges for all-spin logic devices L Su, Y Zhang, JO Klein, Y Zhang, A Bournel, A Fert, W Zhao Scientific Reports 5, 14905, 2015	52	2015
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus Nanotechnology 23 (6), 065201, 2012	51	2012
Graphene nanomesh transistor with high on/off ratio and good saturation behavior S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ... Applied Physics Letters 103 (18), 183509, 2013	48	2013
Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices D Querlioz, J Saint-Martin, A Bournel, P Dollfus Physical Review B 78 (16), 165306, 2008	47	2008
An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs D Querlioz, P Dollfus, VN Do, A Bournel Journal of Computational Electronics 5 (4), 443-446, 2006	46	2006
Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile M Raine, G Hubert, M Gaillardin, P Paillet, A Bournel IEEE Transactions on Nuclear Science 58 (6), 2607-2613, 2011	42	2011
Monte Carlo study of apparent mobility reduction in nano-MOSFETs K Huet, J Saint-Martin, A Bournel, S Galdin-Retailleau, P Dollfus, ... 37th European Solid State Device Research Conference (ESSDERC 2007), 382-385, 2007	41	2007
Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions V Hung Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus Applied Physics Letters 99 (4), 042105, 2011	39	2011

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