Rudiger (Rüdiger) Quay
Rudiger (Rüdiger) Quay
Otros nombresRuediger Quay
Fraunhofer IAF, Albert Ludwigs Universität Freiburg
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Citado por
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Gallium nitride electronics
R Quay
Springer Science & Business Media, 2008
Analysis and simulation of heterostructure devices
V Palankovski, R Quay
Springer Science & Business Media, 2004
High-temperature modeling of algan/gan hemts
S Vitanov, V Palankovski, S Maroldt, R Quay
Solid-State Electronics 54 (10), 1105-1112, 2010
A temperature dependent model for the saturation velocity in semiconductor materials
R Quay, C Moglestue, V Palankovski, S Selberherr
Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000
The continuous inverse class-F mode with resistive second-harmonic impedance
V Carrubba, M Akmal, R Quay, J Lees, J Benedikt, SC Cripps, PJ Tasker
IEEE Transactions on Microwave Theory and Techniques 60 (6), 1928-1936, 2012
102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz
H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JFÇ Carlin, ...
IEEE electron device letters 30 (8), 796-798, 2009
Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku-and Ka-band space applications
EM Suijker, M Rodenburg, JA Hoogland, M Van Heijningen, ...
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 1-4, 2009
Metal‐organic chemical vapor deposition of aluminum scandium nitride
S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ...
physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020
Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
S Maroldt, C Haupt, W Pletschen, S Müller, R Quay, O Ambacher, ...
Japanese Journal of Applied Physics 48 (4S), 04C083, 2009
Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications
U Schmid, H Sledzik, P Schuh, J Schroth, M Oppermann, P Brückner, ...
IEEE Transactions on Microwave Theory and Techniques 61 (8), 3043-3051, 2013
GaN MMIC based T/R-module front-end for X-band applications
P Schuh, H Sledzik, R Reber, A Fleckenstein, R Leberer, M Oppermann, ...
2008 European Microwave Integrated Circuit Conference, 274-277, 2008
Assembly and packaging technologies for high-temperature and high-power GaN devices
AA Bajwa, Y Qin, R Reiner, R Quay, J Wilde
IEEE Transactions on Components, Packaging and Manufacturing Technology 5 …, 2015
GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ...
IEEE Electron Device Letters 31 (7), 671-673, 2010
Physics-based modeling of GaN HEMTs
S Vitanov, V Palankovski, S Maroldt, R Quay, S Murad, T Rodle, ...
IEEE Transactions on Electron Devices 59 (3), 685-693, 2012
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ...
Journal of Applied Physics 106 (2), 2009
D-band and G-band high-performance GaN power amplifier MMICs
M Ćwikliński, P Brückner, S Leone, C Friesicke, H Maßler, R Lozar, ...
IEEE Transactions on Microwave Theory and Techniques 67 (12), 5080-5089, 2019
Robust GaN HEMT low-noise amplifier MMICs for X-band applications
D Krausse, R Quay, A Tessmann, H Massler, A Leuther, T Merkle, ...
Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology
R Reiner, P Waltereit, B Weiss, S Moench, M Wespel, S Müller, R Quay, ...
IET Power Electronics 11 (4), 681-688, 2018
Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
M Caesar, M Dammann, V Polyakov, P Waltereit, W Bronner, M Baeumler, ...
2012 IEEE International Reliability Physics Symposium (IRPS), CD. 6.1-CD. 6.5, 2012
The resistive-reactive class-J power amplifier mode
C Friesicke, R Quay, AF Jacob
IEEE microwave and wireless components letters 25 (10), 666-668, 2015
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