A survey of wide bandgap power semiconductor devices J Millán, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo
IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013
1246 2013 Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ...
IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010
47 2010 Long-term reliability of railway power inverters cooled by heat-pipe-based systems X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet
IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010
45 2010 High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures J Fernandez, P Godignon, S Berberich, J Rebollo, G Brezeanu, J Millan
Solid-State Electronics 39 (9), 1359-1364, 1996
44 1996 IGBT module failure analysis in railway applications X Perpina, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ...
Microelectronics Reliability 48 (8-9), 1427-1431, 2008
38 2008 Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Microelectronics Reliability 45 (3-4), 493-498, 2005
36 2005 Study of novel techniques for reducing self-heating effects in SOI power LDMOS J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
35 2002 Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review M Cabello, V Soler, G Rius, J Montserrat, J Rebollo, P Godignon
Materials Science in Semiconductor Processing 78, 22-31, 2018
33 2018 A numerical study of field plate configurations in RF SOI LDMOS transistors I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Solid-state electronics 50 (2), 155-163, 2006
32 2006 First-principles study of R Rurali, P Godignon, J Rebollo, E Hernández, P Ordejón
Applied physics letters 82 (24), 4298-4300, 2003
31 2003 Theoretical evidence for the kick-out mechanism for B diffusion in SiC R Rurali, P Godignon, J Rebollo, P Ordejón, E Hernández
Applied physics letters 81 (16), 2989-2991, 2002
28 2002 First-principles studies of the diffusion of B impurities and vacancies in SiC R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejón
Physical Review B 69 (12), 125203, 2004
27 2004 Reduction of self-heating effect on SOIM devices J Roig, D Flores, M Vellvehí, J Rebollo, J Millan
Microelectronics Reliability 42 (1), 61-66, 2002
26 2002 Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors I Cortés, P Fernández-Martínez, D Flores, S Hidalgo, J Rebollo
Semiconductor science and technology 23 (9), 095024, 2008
22 2008 First principles studies of neutral vacancies diffusion in SiC R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejon
Computational materials science 27 (1-2), 36-42, 2003
20 2003 Layout role in failure physics of IGBTs under overloading clamped inductive turnoff X Perpina, I Cortes, J Urresti-Ibanez, X Jorda, J Rebollo
IEEE transactions on electron devices 60 (2), 598-605, 2012
19 2012 The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications I Cortes, P Fernandez-Martinez, D Flores, S Hidalgo, J Rebollo
Semiconductor science and technology 22 (10), 1183, 2007
18 2007 Analysis of the quasi-saturation region of high voltage VDMOS devices J Rebollo, E Figueras, J Millan, E Lora-Tamayo, F Serra-Mestres
Solid-state electronics 30 (2), 177-180, 1987
18 1987 Robustness test and failure analysis of IGBT modules during turn-off J Urresti-Ibañez, A Castellazzi, M Piton, J Rebollo, M Mermet-Guyennet, ...
Microelectronics Reliability 47 (9-11), 1725-1729, 2007
17 2007 An ON-resistance closed form for VDMOS devices J Fernandez, S Hidalgo, J Paredes, F Berta, J Rebollo, J Millan, ...
IEEE electron device letters 10 (5), 212-215, 1989
17 1989 