j rebollo
j rebollo
Correu electrònic verificat a imb-cnm.csic.es
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A survey of wide bandgap power semiconductor devices
J Millán, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo
IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013
12462013
Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions
X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ...
IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010
472010
Long-term reliability of railway power inverters cooled by heat-pipe-based systems
X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet
IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010
452010
High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures
J Fernandez, P Godignon, S Berberich, J Rebollo, G Brezeanu, J Millan
Solid-State Electronics 39 (9), 1359-1364, 1996
441996
IGBT module failure analysis in railway applications
X Perpina, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ...
Microelectronics Reliability 48 (8-9), 1427-1431, 2008
382008
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile
I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Microelectronics Reliability 45 (3-4), 493-498, 2005
362005
Study of novel techniques for reducing self-heating effects in SOI power LDMOS
J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
352002
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
M Cabello, V Soler, G Rius, J Montserrat, J Rebollo, P Godignon
Materials Science in Semiconductor Processing 78, 22-31, 2018
332018
A numerical study of field plate configurations in RF SOI LDMOS transistors
I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Solid-state electronics 50 (2), 155-163, 2006
322006
First-principles study of -type dopants and their clustering in SiC
R Rurali, P Godignon, J Rebollo, E Hernández, P Ordejón
Applied physics letters 82 (24), 4298-4300, 2003
312003
Theoretical evidence for the kick-out mechanism for B diffusion in SiC
R Rurali, P Godignon, J Rebollo, P Ordejón, E Hernández
Applied physics letters 81 (16), 2989-2991, 2002
282002
First-principles studies of the diffusion of B impurities and vacancies in SiC
R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejón
Physical Review B 69 (12), 125203, 2004
272004
Reduction of self-heating effect on SOIM devices
J Roig, D Flores, M Vellvehí, J Rebollo, J Millan
Microelectronics Reliability 42 (1), 61-66, 2002
262002
Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors
I Cortés, P Fernández-Martínez, D Flores, S Hidalgo, J Rebollo
Semiconductor science and technology 23 (9), 095024, 2008
222008
First principles studies of neutral vacancies diffusion in SiC
R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejon
Computational materials science 27 (1-2), 36-42, 2003
202003
Layout role in failure physics of IGBTs under overloading clamped inductive turnoff
X Perpina, I Cortes, J Urresti-Ibanez, X Jorda, J Rebollo
IEEE transactions on electron devices 60 (2), 598-605, 2012
192012
The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications
I Cortes, P Fernandez-Martinez, D Flores, S Hidalgo, J Rebollo
Semiconductor science and technology 22 (10), 1183, 2007
182007
Analysis of the quasi-saturation region of high voltage VDMOS devices
J Rebollo, E Figueras, J Millan, E Lora-Tamayo, F Serra-Mestres
Solid-state electronics 30 (2), 177-180, 1987
181987
Robustness test and failure analysis of IGBT modules during turn-off
J Urresti-Ibañez, A Castellazzi, M Piton, J Rebollo, M Mermet-Guyennet, ...
Microelectronics Reliability 47 (9-11), 1725-1729, 2007
172007
An ON-resistance closed form for VDMOS devices
J Fernandez, S Hidalgo, J Paredes, F Berta, J Rebollo, J Millan, ...
IEEE electron device letters 10 (5), 212-215, 1989
171989
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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