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A survey of wide bandgap power semiconductor devices
J Millan, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo
IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013
23402013
Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
A Matallana, E Ibarra, I López, J Andreu, JI Garate, X Jordà, J Rebollo
Renewable and Sustainable Energy Reviews 113, 109264, 2019
1312019
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
M Cabello, V Soler, G Rius, J Montserrat, J Rebollo, P Godignon
Materials Science in Semiconductor Processing 78, 22-31, 2018
902018
Long-term reliability of railway power inverters cooled by heat-pipe-based systems
X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet
IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010
622010
Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions
X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ...
IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010
582010
High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures
J Fernandez, P Godignon, S Berberich, J Rebollo, G Brezeanu, J Millan
Solid-State Electronics 39 (9), 1359-1364, 1996
481996
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile
I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Microelectronics Reliability 45 (3-4), 493-498, 2005
422005
IGBT module failure analysis in railway applications
X Perpina, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ...
Microelectronics Reliability 48 (8-9), 1427-1431, 2008
392008
A numerical study of field plate configurations in RF SOI LDMOS transistors
I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Solid-State Electronics 50 (2), 155-163, 2006
382006
Study of novel techniques for reducing self-heating effects in SOI power LDMOS
J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
382002
First-principles study of -type dopants and their clustering in SiC
R Rurali, P Godignon, J Rebollo, E Hernández, P Ordejon
Applied physics letters 82 (24), 4298-4300, 2003
342003
Theoretical evidence for the kick-out mechanism for B diffusion in SiC
R Rurali, P Godignon, J Rebollo, P Ordejon, E Hernández
Applied physics letters 81 (16), 2989-2991, 2002
302002
Layout role in failure physics of IGBTs under overloading clamped inductive turnoff
X Perpina, I Cortes, J Urresti-Ibanez, X Jorda, J Rebollo
IEEE Transactions on Electron Devices 60 (2), 598-605, 2012
282012
First-principles studies of the diffusion of B impurities and vacancies in SiC
R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejón
Physical Review B 69 (12), 125203, 2004
282004
First principles studies of neutral vacancies diffusion in SiC
R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejón
Computational materials science 27 (1-2), 36-42, 2003
272003
Reduction of self-heating effect on SOIM devices
J Roig, D Flores, M Vellvehí, J Rebollo, J Millan
Microelectronics Reliability 42 (1), 61-66, 2002
272002
High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide
V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ...
IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017
252017
Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors
I Cortés, P Fernández-Martínez, D Flores, S Hidalgo, J Rebollo
Semiconductor science and technology 23 (9), 095024, 2008
242008
Solid-state relay solutions for induction cooking applications based on advanced power semiconductor devices
M Fernández, X Perpiñà, J Rebollo, M Vellvehi, D Sánchez, T Cabeza, ...
IEEE transactions on industrial electronics 66 (3), 1832-1841, 2018
222018
Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors
M Cabello, V Soler, J Montserrat, J Rebollo, JM Rafí, P Godignon
Applied Physics Letters 111 (4), 2017
222017
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