| A 65-nm reliable 6T CMOS SRAM cell with minimum size transistors G Torrens, B Alorda, C Carmona, D Malagon-Perianez, J Segura, S Bota IEEE Transactions on Emerging Topics in Computing 7 (3), 447-455, 2017 | 39 | 2017 |
| Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources D Malagón, SA Bota, G Torrens, X Gili, J Praena, B Fernández, M Macías, ... Microelectronics Reliability 78, 38-45, 2017 | 28 | 2017 |
| Design considerations of an SRAM array for the statistical validation of time-dependent variability models P Saraza-Canflanca, D Malagon, F Passos, A Toro, J Núñez, ... 2018 15th International Conference on Synthesis, Modeling, Analysis and …, 2018 | 8 | 2018 |
| Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment D Malagón, G Torrens, J Segura, SA Bota Microelectronics Reliability 110, 113696, 2020 | 2 | 2020 |
| Memory State Transient Analysis (MSTA): A New Soft Error Rate Measurement Method for CMOS Memory Elements Based on Stochastic Analysis SA Bota, G Torrens, J Verd, JL Merino, D Malagon-Perianez, J Segura IEEE Transactions on Nuclear Science 62 (6), 3353-3361, 2015 | 1 | 2015 |
| Single Event Transients trigger instability in Sigma-Delta Modulators DM Perianez, JM de la Rosa, R del Ro, G Leger Proc. Design of Circuits and Integrated Systems (DCIS), 2014 | 1 | 2014 |
| A Contribution to the Characterization of Radiation-induced Soft Errors in Sigma-Delta Modulators and SRAM Memories D Malagón Periánez Universitat de les Illes Balears, 2019 | | 2019 |
| Radiation effects in nanometric SRAMs induced by 18 MeV protons DM Periánez, JL Merino, G Torrens, J Segura, SA Bota, ... 2015 10th Spanish Conference on Electron Devices (CDE), 1-4, 2015 | | 2015 |
