AlGaN metal–semiconductor–metal photodiodes E Monroy, F Calle, E Munoz, F Omnes
Applied Physics Letters 74 (22), 3401-3403, 1999
187 1999 Analysis and modeling of -based Schottky barrier photodiodes E Monroy, F Calle, JL Pau, FJ Sanchez, E Munoz, F Omnes, B Beaumont, ...
Journal of Applied Physics 88 (4), 2081-2091, 2000
142 2000 Schottky barrier photodiodes with fast response and high detectivityE Monroy, F Calle, E Munoz, F Omnes, P Gibart, JA Munoz
Applied physics letters 73 (15), 2146-2148, 1998
123 1998 Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis JA Garrido, JL Sanchez-Rojas, A Jimenez, E Munoz, F Omnes, P Gibart
Applied physics letters 75 (16), 2407-2409, 1999
95 1999 Nanoindentation on AlGaN thin films D Caceres, I Vergara, R Gonzalez, E Monroy, F Calle, E Munoz, F Omnes
Journal of Applied Physics 86 (12), 6773-6778, 1999
78 1999 Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements AF Brana, C Diaz-Paniagua, F Batallan, JA Garrido, E Munoz, F Omnes
Journal of Applied Physics 88 (2), 932-937, 2000
75 2000 Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors E Monroy, F Calle, E Muñoz, F Omnès, B Beaumont, P Gibart
Journal of electronic materials 28, 240-245, 1999
69 1999 Diamond UV detectors for future solar physics missions JF Hochedez, P Bergonzo, MC Castex, P Dhez, O Hainaut, M Sacchi, ...
Diamond and Related Materials 10 (3-7), 673-680, 2001
61 2001 Si-doped AlxGa1-xN photoconductive detectors E Monroy, F Calle, JA Garrido, P Youinou, E Munoz, F Omnès, ...
Semiconductor science and technology 14 (8), 685, 1999
55 1999 Properties of a hole trap in n -type hexagonal GaN P Muret, A Philippe, E Monroy, E Munoz, B Beaumont, F Omnes, P Gibart
Journal of applied physics 91 (5), 2998-3001, 2002
52 2002 GaN-based solar-ultraviolet detection instrument E Monroy, F Calle, C Angulo, P Vila, A Sanz, JA Garrido, E Calleja, ...
Applied optics 37 (22), 5058-5062, 1998
50 1998 Effects of bias on the responsivity of GaN metal–semiconductor–metal photodiodes E Monroy, F Calle, E Munoz, F Omnes
physica status solidi (a) 176 (1), 157-161, 1999
48 1999 High UV/visible contrast photodiodes based on epitaxial lateral overgrown GaN layers E Monroy, F Calle, E Muñoz, B Beaumont, F Omnes, P Gibart
Electronics Letters 35 (17), 1488-1489, 1999
43 1999 AlGaN photodiodes for monitoring solar UV radiation E Muñoz, E Monroy, F Calle, F Omnès, P Gibart
Journal of Geophysical Research: Atmospheres 105 (D4), 4865-4871, 2000
34 2000 Application and performance of GaN based UV detectors E Monroy, F Calle, JL Pau, E Munoz, F Omnes, B Beaumont, P Gibart
physica status solidi (a) 185 (1), 91-97, 2001
31 2001 Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications F Omnes, N Marenco, B Beaumont, P De Mierry, E Monroy, F Calle, ...
Journal of applied physics 86 (9), 5286-5292, 1999
30 1999 New UV detectors for solar observations JFE Hochedez, UH Schuehle, JL Pau, J Alvarez, O Hainaut, ...
Innovative telescopes and instrumentation for solar astrophysics 4853, 419-426, 2003
29 2003 Recent progresses of the BOLD investigation towards UV detectors for the ESA Solar Orbiter JF Hochedez, J Alvarez, FD Auret, P Bergonzo, MC Castex, A Deneuville, ...
Diamond and related materials 11 (3-6), 427-432, 2002
29 2002 Ultraviolet Photodetectors Based on Alx Ga1−x N Schottky Barriers E Monroy, F Calle, E Munoz, F Omnes, B Beaumont, P Gibart, JA Munoz, ...
MRS Internet Journal of Nitride Semiconductor Research 3, 1-4, 1998
26 1998 Low-noise metal-insulator-semiconductor UV photodiodes based on GaN E Monroy, F Calle, JL Pau, E Munoz, F Omnes
Electronics Letters 36 (25), 1, 2000
24 2000