Haitong Li
Title
Cited by
Cited by
Year
Electronic synapses made of layered two-dimensional materials
Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ...
Nature Electronics 1 (8), 458-465, 2018
2402018
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
2192019
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, H Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE Transactions on Electron Devices 60 (12), 4090-4097, 2013
1352013
A SPICE model of resistive random access memory for large-scale memory array simulation
H Li, P Huang, B Gao, B Chen, X Liu, J Kang
IEEE Electron Device Letters 35 (2), 211-213, 2014
932014
Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model
H Li, Z Jiang, P Huang, Y Wu, HY Chen, B Gao, X Liu, J Kang, HSP Wong
Design, Automation & Test in Europe (DATE), 1425, 2015
672015
Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition
H Li, TF Wu, A Rahimi, KS Li, M Rusch, CH Lin, JL Hsu, MM Sabry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2016
662016
Brain-inspired computing exploiting carbon nanotube FETs and resistive RAM: Hyperdimensional computing case study
TF Wu, H Li, PC Huang, A Rahimi, JM Rabaey, HSP Wong, MM Shulaker, ...
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 492-494, 2018
642018
A learnable parallel processing architecture towards unity of memory and computing
H Li, B Gao, Z Chen, Y Zhao, P Huang, H Ye, L Liu, X Liu, J Kang
Scientific Reports 5 (13330), 2015
582015
Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing
H Li, KS Li, CH Lin, JL Hsu, WC Chiu, MC Chen, TT Wu, J Sohn, ...
2016 IEEE Symposium on VLSI Technology, 2016
522016
Resistive RAM-Centric Computing: Design and Modeling Methodology
H Li, TF Wu, S Mitra, HSP Wong
IEEE Transactions on Circuits and Systems I: Regular Papers 64 (9), 2263-2273, 2017
482017
Stanford Memory Trends
HSP Wong, C Ahn, J Cao, HY Chen, SB Eryilmaz, SW Fong, JA Incorvia, ...
Tech. Report, 2017
462017
Optimized learning scheme for grayscale image recognition in a RRAM based analog neuromorphic system
Z Chen, B Gao, Z Zhou, P Huang, H Li, W Ma, D Zhu, L Liu, X Liu, J Kang, ...
IEEE International Electron Devices Meeting (IEDM), 17.7.1 - 17.7.4, 2015
422015
Device and materials requirements for neuromorphic computing
R Islam, H Li, PY Chen, W Wan, HY Chen, B Gao, H Wu, S Yu, ...
Journal of Physics D: Applied Physics 52 (11), 113001, 2019
392019
Ternary content-addressable memory with MoS 2 transistors for massively parallel data search
R Yang, H Li, KKH Smithe, TR Kim, K Okabe, E Pop, JA Fan, HSP Wong
Nature Electronics 2 (3), 108-114, 2019
262019
Hyperdimensional Computing Exploiting Carbon Nanotube FETs, Resistive RAM, and Their Monolithic 3D Integration
TF Wu, H Li, PC Huang, A Rahimi, G Hills, B Hodson, W Hwang, ...
IEEE Journal of Solid-State Circuits 53 (11), 3183-3196, 2018
262018
Analysis of the voltage-time dilemma of metal oxide-based RRAM and solution exploration of high speed and low voltage AC switching
P Huang, Y Wang, H Li, B Gao, B Chen, F Zhang, L Zeng, G Du, ...
IEEE Trans. Nanotechnology 13, 1127-1132, 2014
222014
Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array
H Li, Z Chen, W Ma, B Gao, P Huang, L Liu, X Liu, J Kang
IEEE Electron Device Letters 36 (11), 1142-1145, 2015
202015
Write disturb analyses on half-selected cells of cross-point RRAM arrays
H Li, HY Chen, Z Chen, B Chen, R Liu, G Qiu, P Huang, F Zhang, Z Jiang, ...
IEEE International Reliability Physics Symposium (IRPS), MY. 3.1-MY. 3.4, 2014
202014
Oxide-based RRAM: Requirements and challenges of modeling and simulation
JF Kang, B Gao, P Huang, H Li, YD Zhao, Z Chen, C Liu, LF Liu, XY Liu
IEEE International Electron Devices Meeting (IEDM), 5.4.1 - 5.4.4, 2015
192015
Modeling and Optimization of Bilayered TaOₓ RRAM Based on Defect Evolution and Phase Transition Effects
Y Zhao, P Huang, Z Chen, C Liu, H Li, B Chen, W Ma, F Zhang, B Gao, ...
IEEE Transactions on Electron Devices 63 (4), 1524 - 1532, 2016
182016
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