Saurabh V. Suryavanshi
Saurabh V. Suryavanshi
Unknown affiliation
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Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano letters 17 (6), 3429-3433, 2017
Low Variability in Synthetic Monolayer MoS2 Devices
KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop
ACS nano 11 (8), 8456-8463, 2017
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
KKH Smithe, CD English, SV Suryavanshi, E Pop
2D Materials 4 (1), 011009, 2016
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, OB Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities
SV Suryavanshi, E Pop
Journal of Applied Physics 120 (22), 224503, 2016
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2
KKH Smithe, CD English, SV Suryavanshi, E Pop
Nano letters 18 (7), 4516-4522, 2018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
S Vaziri, E Yalon, MM Rojo, SV Suryavanshi, H Zhang, CJ McClellan, ...
Science advances 5 (8), eaax1325, 2019
Effective n-type doping of monolayer MoS2by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
Thermal boundary conductance of two-dimensional MoS2 interfaces
SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop
Journal of Applied Physics 126 (5), 055107, 2019
Real-time* multiple object tracking (MOT) for autonomous navigation
A Agarwal, S Suryavanshi
Technical report, 2017
High Current Density in Monolayer MoS2 Doped by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
ACS nano 15 (1), 1587-1596, 2021
High mobility in monolayer MoS2 devices grown by chemical vapor deposition
KKH Smithe, CD English, SV Suryavanshi, E Pop
2015 73rd Annual Device Research Conference (DRC), 239-240, 2015
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2
AJ Gabourie, SV Suryavanshi, AB Farimani, E Pop
2D Materials 8 (1), 011001, 2020
Stanford 2D Semiconductor (S2DS)
SV Suryavanshi, E Pop
nanoHUB, 2016
Bismuth-Doped Ferroelectric Devices
L Shifren, CAP de Araujo, JB Celinska, SV Suryavanshi
US Patent App. 16/248,496, 2020
Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors
CJ McClellan, E Yalon, L Cai, S Suryavanshi, X Zheng, E Pop
2018 76th Device Research Conference (DRC), 1-2, 2018
Two-dimensional devices and interfaces: From fundamentals to system models
SV Suryavanshi
Stanford University, 2018
Thermal boundary conductance of the MOS2-SiO2interface
SV Suryavanshi, AJ Gabourie, AB Farimani, E Yalon, E Pop
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 26-29, 2017
Scaling Theory of Two-Dimensional Field Effect Transistors
SV Suryavanshi, CD English, HSP Wong, E Pop
arXiv preprint arXiv:2105.10791, 2021
Improving Electric Contacts to Two-Dimensional Semiconductors
SV Suryavanshi, B Magyari-Kope, P Lim, C McClellan, KKH Smithe, ...
arXiv preprint arXiv:2105.10792, 2021
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