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| Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications H Sun, RB Simon, JW Pomeroy, D Francis, F Faili, DJ Twitchen, M Kuball Applied Physics Letters 106 (11), 2015 | 176 | 2015 |
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| AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz DC Dumka, TM Chou, F Faili, D Francis, F Ejeckam Electronics Letters 49 (20), 1298-1299, 2013 | 96 | 2013 |
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| Probing growth-induced anisotropic thermal transport in high-quality CVD diamond membranes by multifrequency and multiple-spot-size time-domain thermoreflectance Z Cheng, T Bougher, T Bai, SY Wang, C Li, L Yates, BM Foley, M Goorsky, ... ACS applied materials & interfaces 10 (5), 4808-4815, 2018 | 67 | 2018 |
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| Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices D Liu, D Francis, F Faili, C Middleton, J Anaya, JW Pomeroy, DJ Twitchen, ... Scripta Materialia 128, 57-60, 2017 | 55 | 2017 |
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| S2-T1: GaN-on-diamond: A brief history F Ejeckam, D Francis, F Faili, D Twitchen, B Bolliger, D Babic, J Felbinger 2014 lester eastman Conference on high performance devices (LEC), 1-5, 2014 | 39 | 2014 |
| S2-T3: Next generation gallium nitride HEMTs enabled by diamond substrates M Tyhach, D Altman, S Bernstein, R Korenstein, J Cho, KE Goodson, ... 2014 Lester Eastman Conference on High Performance Devices (LEC), 1-4, 2014 | 38 | 2014 |
| GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity D Liu, H Sun, JW Pomeroy, D Francis, F Faili, DJ Twitchen, M Kuball Applied Physics Letters 107 (25), 2015 | 37 | 2015 |
