Jean-Luc Autran
Jean-Luc Autran
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TítuloCitado porAño
Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
C Chaneliere, JL Autran, RAB Devine, B Balland
Materials Science and Engineering: R: Reports 22 (6), 269-322, 1998
7041998
Properties of amorphous and crystalline thin films deposited on Si from a precursor
C Chaneliere, S Four, JL Autran, RAB Devine, NP Sandler
Journal of applied physics 83 (9), 4823-4829, 1998
1361998
Influence of band-structure on electron ballistic transport in Silicon nanowire MOSFET's: an atomistic study
K Nehari, N Cavassilas, JL Autran, M Bescond, D Munteanu, M Lannoo
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
1302005
75 nm damascene metal gate and high-k integration for advanced CMOS devices
B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...
Digest. International Electron Devices Meeting,, 355-358, 2002
1282002
Modeling and simulation of single-event effects in digital devices and ICs
D Munteanu, JL Autran
IEEE Transactions on Nuclear science 55 (4), 1854-1878, 2008
1242008
On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs
P Masson, JL Autran, J Brini
IEEE Electron Device Letters 20 (2), 92-94, 1999
1151999
Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices
D Munteanu, JL Autran
Solid-State Electronics 47 (7), 1219-1225, 2003
1032003
Quantum short-channel compact modelling of drain-current in double-gate MOSFET
D Munteanu, JL Autran, X Loussier, S Harrison, R Cerutti, T Skotnicki
Solid-state electronics 50 (4), 680-686, 2006
972006
Technology downscaling worsening radiation effects in bulk: SOI to the rescue
P Roche, JL Autran, G Gasiot, D Munteanu
2013 IEEE International Electron Devices Meeting, 31.1. 1-31.1. 4, 2013
932013
Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors
RAB Devine, JL Autran, WL Warren, KL Vanheusdan, JC Rostaing
Applied Physics Letters 70 (22), 2999-3001, 1997
931997
Frequency characterization and modeling of interface traps in gate dielectric stack from a capacitance point-of-view
P Masson, JL Autran, M Houssa, X Garros, C Leroux
Applied Physics Letters 81 (18), 3392-3394, 2002
882002
Scanning nonlinear dielectric microscopy nano-science and technology for next generation high density ferroelectric data storage
K Tanaka, Y Kurihashi, T Uda, Y Daimon, N Odagawa, R Hirose, ...
Japanese Journal of Applied Physics 47 (5R), 3311, 2008
872008
Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2gate stack
V Barral, T Poiroux, F Andrieu, C Buj-Dufournet, O Faynot, T Ernst, ...
2007 IEEE International Electron Devices Meeting, 61-64, 2007
822007
Conduction mechanisms in and stacked structures on Si
C Chaneliere, JL Autran, RAB Devine
Journal of applied physics 86 (1), 480-486, 1999
821999
Model for interface defect and positive charge generation in ultrathin gate dielectric stacks
M Houssa, JL Autran, A Stesmans, MM Heyns
Applied Physics Letters 81 (4), 709-711, 2002
802002
Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source
RAB Devine, L Vallier, JL Autran, P Paillet, JL Leray
Applied physics letters 68 (13), 1775-1777, 1996
801996
Heavy ion testing and 3D simulations of Multiple Cell Upset in 65nm standard SRAMs
D Giot, P Roche, G Gasiot, JL Autran, R Harboe-Sorensen
2007 9th European Conference on Radiation and Its Effects on Components and …, 2007
772007
Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2 O 5 gate insulator
JL Autran, R Devine, C Chaneliere, B Balland
IEEE Electron device letters 18 (9), 447-449, 1997
771997
Single event upset and multiple cell upset modeling in commercial bulk 65-nm CMOS SRAMs and flip-flops
S Uznanski, G Gasiot, P Roche, C Tavernier, JL Autran
IEEE Transactions on Nuclear Science 57 (4), 1876-1883, 2010
762010
3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
M Bescond, K Nehari, JL Autran, N Cavassilas, D Munteanu, M Lannoo
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
712004
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