Wang Kang
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Skyrmion-electronics: An overview and outlook
W Kang, Y Huang, X Zhang, Y Zhou, W Zhao
Proceedings of the IEEE 104 (10), 2040-2061, 2016
1902016
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
M Wang, W Cai, K Cao, J Zhou, J Wrona, S Peng, H Yang, J Wei, W Kang, ...
Nature communications 9 (1), 1-7, 2018
1502018
Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology
W Kang, L Zhang, JO Klein, Y Zhang, D Ravelosona, W Zhao
IEEE Transactions on Electron Devices 62 (6), 1769-1777, 2015
1292015
Voltage controlled magnetic skyrmion motion for racetrack memory
W Kang, Y Huang, C Zheng, W Lv, N Lei, Y Zhang, X Zhang, Y Zhou, ...
Scientific reports 6, 23164, 2016
1262016
Magnetic skyrmion-based synaptic devices
Y Huang, W Kang, X Zhang, Y Zhou, W Zhao
Nanotechnology 28 (8), 08LT02, 2017
1232017
Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology
W Kang, Y Zhang, Z Wang, JO Klein, C Chappert, D Ravelosona, G Wang, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (2), 1-42, 2015
872015
Magnetic skyrmion-based artificial neuron device
S Li, W Kang, Y Huang, X Zhang, Y Zhou, W Zhao
Nanotechnology 28 (31), 31LT01, 2017
842017
Yield and reliability improvement techniques for emerging nonvolatile STT-MRAM
W Kang, L Zhang, W Zhao, JO Klein, Y Zhang, D Ravelosona, C Chappert
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (1 …, 2014
642014
Modeling and exploration of the voltage-controlled magnetic anisotropy effect for the next-generation low-power and high-speed MRAM applications
W Kang, Y Ran, Y Zhang, W Lv, W Zhao
IEEE Transactions on Nanotechnology 16 (3), 387-395, 2017
632017
Compact model of subvolume MTJ and its design application at nanoscale technology nodes
Y Zhang, B Yan, W Kang, Y Cheng, JO Klein, Y Zhang, Y Chen, W Zhao
IEEE Transactions on Electron Devices 62 (6), 2048-2055, 2015
602015
Variation-tolerant and disturbance-free sensing circuit for deep nanometer STT-MRAM
W Kang, Z Li, JO Klein, Y Chen, Y Zhang, D Ravelosona, C Chappert, ...
IEEE Trans. Nanotechnol 13 (6), 1088-1092, 2014
582014
Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy
W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ...
Materials 9 (1), 41, 2016
542016
High reliability sensing circuit for deep submicron spin transfer torque magnetic random access memory
W Kang, W Zhao, JO Klein, Y Zhang, C Chappert, D Ravelosona
Electronics Letters 49 (20), 1283-1285, 2013
542013
Complementary skyrmion racetrack memory with voltage manipulation
W Kang, C Zheng, Y Huang, X Zhang, Y Zhou, W Lv, W Zhao
IEEE Electron Device Letters 37 (7), 924-927, 2016
532016
Separated precharge sensing amplifier for deep submicrometer MTJ/CMOS hybrid logic circuits
W Kang, E Deng, JO Klein, Y Zhang, Y Zhang, C Chappert, D Ravelosona, ...
IEEE Transactions on Magnetics 50 (6), 1-5, 2014
502014
A low-cost built-in error correction circuit design for STT-MRAM reliability improvement
W Kang, WS Zhao, Z Wang, Y Zhang, JO Klein, Y Zhang, C Chappert, ...
Microelectronics Reliability 53 (9-11), 1224-1229, 2013
472013
Stateful reconfigurable logic via a single-voltage-gated spin Hall-effect driven magnetic tunnel junction in a spintronic memory
H Zhang, W Kang, L Wang, KL Wang, W Zhao
IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017
462017
Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions
W Kang, Z Wang, Y Zhang, JO Klein, W Lv, W Zhao
Journal of Physics D: Applied Physics 49 (6), 065008, 2016
442016
In-memory processing paradigm for bitwise logic operations in STT–MRAM
W Kang, H Wang, Z Wang, Y Zhang, W Zhao
IEEE Transactions on Magnetics 53 (11), 1-4, 2017
432017
Distributed learning without distress: Privacy-preserving empirical risk minimization
B Jayaraman, L Wang, D Evans, Q Gu
Advances in Neural Information Processing Systems, 6343-6354, 2018
422018
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