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Tobias Südkamp
Tobias Südkamp
Verified email at uni-muenster.de
Title
Cited by
Cited by
Year
Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to 755∘ C
T Südkamp, H Bracht
Physical Review B 94 (12), 125208, 2016
512016
Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography
G Hamdana, T Südkamp, M Descoins, D Mangelinck, L Caccamo, ...
Microelectronic Engineering 179, 74-82, 2017
372017
Doping dependence of self-diffusion in germanium and the charge states of vacancies
T Südkamp, H Bracht, G Impellizzeri, J Lundsgaard Hansen, ...
Applied Physics Letters 102 (24), 2013
182013
Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb
J Kujala, T Südkamp, J Slotte, I Makkonen, F Tuomisto, H Bracht
Journal of Physics: Condensed Matter 28 (33), 335801, 2016
162016
Self-diffusion in single crystalline silicon nanowires
T Südkamp, G Hamdana, M Descoins, D Mangelinck, HS Wasisto, ...
Journal of Applied Physics 123 (16), 2018
72018
Response to “Comment on ‘Diffusion of n-type dopants in germanium’”[Appl. Phys. Rev. 2, 036101 (2015)]
H Bracht, T Südkamp, M Radek, A Chroneos
Applied Physics Reviews 2 (3), 2015
52015
Diffusion of boron in germanium at 800–900° C revisited
F Kipke, T Südkamp, JK Prüßing, D Bougeard, H Bracht
Journal of Applied Physics 127 (2), 2020
32020
Characterization of atomic transport in nano-structured silicon and germanium to reveal properties of self-and foreign-atom defects
T Südkamp
Westfälische Wilhelms-Universität Münster, 2018
12018
Large-area fabrication of silicon nanostructures by templated nanoparticle arrays
G Hamdana, M Bertke, T Südkamp, H Bracht, HS Wasisto, E Peiner
Nanotechnology VIII 10248, 8-16, 2017
2017
Highly ordered silicon nanopillar by nanoparticle lithography
G Hamdana, M Bertke, T Suedkamp, H Bracht, HS Wasisto, E Peiner
Micro-Nano-Integration; 6. GMM-Workshop, 1-5, 2016
2016
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