| A survey of wide bandgap power semiconductor devices J Millan, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013 | 2850 | 2013 |
| P-type β-gallium oxide: A new perspective for power and optoelectronic devices E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ... Materials Today Physics 3, 118-126, 2017 | 265 | 2017 |
| Inhibiting the absorber/Mo-back contact decomposition reaction in Cu 2 ZnSnSe 4 solar cells: the role of a ZnO intermediate nanolayer S López-Marino, M Placidi, A Pérez-Tomás, J Llobet, V Izquierdo-Roca, ... Journal of Materials Chemistry A 1 (29), 8338-8343, 2013 | 195 | 2013 |
| Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ... Journal of applied physics 100 (11), 2006 | 153 | 2006 |
| Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS2: vibrational properties of atomically thin MoS2 layers M Placidi, M Dimitrievska, V Izquierdo-Roca, X Fontané, ... 2D Materials 2 (3), 035006, 2015 | 144 | 2015 |
| Performance and stability of mixed FAPbI3 (0.85) MAPbBr3 (0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation Y Reyna, M Salado, S Kazim, A Pérez-Tomas, S Ahmad, M Lira-Cantu Nano Energy 30, 570-579, 2016 | 133 | 2016 |
| Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes R Pérez, D Tournier, A Pérez-Tomás, P Godignon, N Mestres, J Millán IEEE Transactions on Electron Devices 52 (10), 2309-2316, 2005 | 124 | 2005 |
| p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics E Chikoidze, C Sartel, I Madaci, H Mohamed, C Vilar, B Ballesteros, ... Crystal Growth & Design 20 (4), 2535-2546, 2020 | 117 | 2020 |
| Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga 2 O 3 semiconductor E Chikoidze, C Sartel, H Mohamed, I Madaci, T Tchelidze, M Modreanu, ... Journal of Materials Chemistry C 7 (33), 10231-10239, 2019 | 108 | 2019 |
| Metal oxides in photovoltaics: all-oxide, ferroic, and perovskite solar cells A Perez-Tomas, A Mingorance, D Tanenbaum, M Lira-Cantu The future of semiconductor oxides in next-generation solar cells, 267-356, 2018 | 106 | 2018 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 2013 | 101 | 2013 |
| GaN transistor characteristics at elevated temperatures A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ... Journal of Applied Physics 106 (7), 2009 | 101 | 2009 |
| Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ... Journal of Applied Physics 113 (17), 2013 | 86 | 2013 |
| Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ... IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017 | 81 | 2017 |
| A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface A Pérez-Tomás, P Godignon, N Mestres, J Millán Microelectronic engineering 83 (3), 440-445, 2006 | 79 | 2006 |
| Characterization and modeling of nn Si∕ SiC heterojunction diodes A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ... Journal of applied physics 102 (1), 2007 | 73 | 2007 |
| Origin of large negative electrocaloric effect in antiferroelectric P Vales-Castro, R Faye, M Vellvehi, Y Nouchokgwe, X Perpiñà, ... Physical Review B 103 (5), 054112, 2021 | 69 | 2021 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 2011 | 66 | 2011 |
| Functional oxides for photoneuromorphic engineering: toward a solar brain A Pérez‐Tomás Advanced Materials Interfaces 6 (15), 1900471, 2019 | 62* | 2019 |
| GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ... Journal of Applied Physics 105 (11), 2009 | 57 | 2009 |
Mike JenningsProfessor, Swansea UniversityVerified email at swansea.ac.uk
