| Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes F Triendl, G Pfusterschmied, G Pobegen, JP Konrath, U Schmid Semiconductor Science and Technology 35 (11), 115011, 2020 | 19 | 2020 |
| Influence of the AlN/Pt-ratio on the electro-mechanical properties of multilayered AlN/Pt thin film strain gauges at high temperatures P Schmid, F Triendl, C Zarfl, S Schwarz, W Artner, M Schneider, U Schmid Sensors and Actuators A: Physical 302, 111805, 2020 | 13 | 2020 |
| Electro-mechanical properties of multilayered aluminum nitride and platinum thin films at high temperatures P Schmid, F Triendl, C Zarfl, S Schwarz, W Artner, M Schneider, U Schmid Sensors and Actuators A: Physical 293, 128-135, 2019 | 13 | 2019 |
| Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC: H interface layer F Triendl, G Pfusterschmied, C Berger, S Schwarz, W Artner, U Schmid Thin Solid Films 721, 138539, 2021 | 10 | 2021 |
| On the crystallization behavior of sputter-deposited a-Si films on 4H-SiC F Triendl, G Pfusterschmied, G Fleckl, S Schwarz, U Schmid Thin Solid Films 697, 137837, 2020 | 8 | 2020 |
| Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range F Triendl, G Fleckl, M Schneider, G Pfusterschmied, U Schmid Journal of Vacuum Science & Technology B 37 (3), 2019 | 8 | 2019 |
| Impact of adhesion promoters and sputter parameters on the electro-mechanical properties of Pt thin films at high temperatures P Schmid, C Zarfl, F Triendl, FJ Maier, S Schwarz, M Schneider, U Schmid Sensors and Actuators A: Physical 285, 149-157, 2019 | 7 | 2019 |
| Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes F Triendl, G Pfusterschmied, S Schwarz, G Pobegen, JP Konrath, ... Semiconductor Science and Technology 36 (5), 055021, 2021 | 6 | 2021 |
| Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC F Triendl, G Pfusterschmied, G Pobegen, S Schwarz, W Artner, ... Materials Science in Semiconductor Processing 131, 105888, 2021 | 4 | 2021 |
| Impact of Ar+ bombardment of 4H–SiC substrates on Schottky diode barrier heights G Pfusterschmied, F Triendl, M Schneider, U Schmid Materials Science in Semiconductor Processing 123, 105504, 2021 | 3 | 2021 |
| Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization F Triendl, G Pfusterschmied, C Zellner, W Artner, K Hradil, U Schmid Materials Letters: X 6, 100040, 2020 | 3 | 2020 |
| Si/4H–SiC heterostructure formation using metal-induced crystallization F Triendl, G Pfusterschmied, S Schwarz, W Artner, U Schmid Materials Science in Semiconductor Processing 128, 105763, 2021 | 2 | 2021 |
| Interface trap and mobile charge density in dry oxidized 4H-SiC MOS structures in a wide temperature range F Triendl Wien, 2018 | 1 | 2018 |
| Semiconductor device JP Konrath, G Pfusterschmied, G Pobegen, U Schmid, F Triendl US Patent 11,677,023, 2023 | | 2023 |
| Microstructural and electrical characterization of Si/4H-SiC heterojunction diodes F Triendl Technische Universität Wien, 2021 | | 2021 |
