| SiC Schottky diodes for harsh environment space applications P Godignon, X Jordà, M Vellvehi, X Perpina, V Banu, D López, J Barbero, ... IEEE Transactions on Industrial Electronics 58 (7), 2582-2590, 2010 | 88 | 2010 |
| Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications LA Navarro, X Perpiñà, P Godignon, J Montserrat, V Banu, M Vellvehi, ... IEEE transactions on Power Electronics 29 (5), 2261-2271, 2013 | 73 | 2013 |
| SiC integrated circuit control electronics for high-temperature operation M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ... IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014 | 57 | 2014 |
| Irradiance-based emissivity correction in infrared thermography for electronic applications M Vellvehi, X Perpiñà, GL Lauro, F Perillo, X Jordà Review of scientific instruments 82 (11), 114901, 2011 | 50 | 2011 |
| Use of ASICs in PWM techniques for power converters JM Retif, B Allard, X Jorda, A Perez Proceedings of IECON'93-19th Annual Conference of IEEE Industrial …, 1993 | 49 | 1993 |
| Reliability and safety in railway X Perpinya BoD–Books on Demand, 2012 | 48 | 2012 |
| Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ... IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010 | 47 | 2010 |
| Long-term reliability of railway power inverters cooled by heat-pipe-based systems X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010 | 45 | 2010 |
| High-frequency ultrasonic atomization with pulsed excitation A Lozano, H Amaveda, F Barreras, X Jorda, M Lozano J. Fluids Eng. 125 (6), 941-945, 2003 | 40 | 2003 |
| GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ... Journal of Applied Physics 105 (11), 114510, 2009 | 39 | 2009 |
| IGBT module failure analysis in railway applications X Perpina, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ... Microelectronics Reliability 48 (8-9), 1427-1431, 2008 | 38 | 2008 |
| Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs M Fernandez, X Perpina, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ... IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017 | 34 | 2017 |
| Schottky versus bipolar 3.3 kV SiC diodes A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ... Semiconductor science and technology 23 (12), 125004, 2008 | 33 | 2008 |
| Bipolar conduction impact on electrical characteristics and reliability of 1.2-and 3.5-kV 4H-SiC JBS diodes P Brosselard, N Camara, V Banu, X Jordà, M Vellvehi, P Godignon, ... IEEE Transactions on Electron Devices 55 (8), 1847-1856, 2008 | 32 | 2008 |
| Thermal resistance investigations on new leadframe-based LED packages and boards B Pardo, A Gasse, A Fargeix, J Jakovenko, RJ Werkhoven, X Perpiñà, ... Microelectronics Reliability 53 (8), 1084-1094, 2013 | 30 | 2013 |
| Internal infrared laser deflection system: a tool for power device characterization X Perpiñà, X Jordà, N Mestres, M Vellvehi, P Godignon, J Millán, ... Measurement Science and Technology 15 (5), 1011, 2004 | 29 | 2004 |
| P-GaN HEMTs drain and gate current analysis under short-circuit M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack IEEE Electron Device Letters 38 (4), 505-508, 2017 | 27 | 2017 |
| Coupled electro-thermal simulation of a DC/DC converter M Vellvehi, X Jorda, P Godignon, C Ferrer, J Millán Microelectronics Reliability 47 (12), 2114-2121, 2007 | 26 | 2007 |
| Reduced-order thermal behavioral model based on diffusive representation B Allard, X Jorda, P Bidan, A Rumeau, H Morel, X Perpina, M Vellvehi, ... IEEE transactions on power electronics 24 (12), 2833-2846, 2009 | 24 | 2009 |
| Power-substrate static thermal characterization based on a test chip X Jorda, X Perpina, M Vellvehi, J Coleto IEEE Transactions on Device and Materials reliability 8 (4), 671-679, 2008 | 22 | 2008 |
Miquel VellvehiIMB, CNM, CSICCorreu electrònic verificat a imb-cnm.csic.es
