Xavier JORDA
Xavier JORDA
Tenured Scientist, IMB-CNM (CSIC)
Correu electrònic verificat a imb-cnm.csic.es - Pàgina d'inici
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SiC Schottky diodes for harsh environment space applications
P Godignon, X Jordà, M Vellvehi, X Perpina, V Banu, D López, J Barbero, ...
IEEE Transactions on Industrial Electronics 58 (7), 2582-2590, 2010
862010
Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications
LA Navarro, X Perpiñà, P Godignon, J Montserrat, V Banu, M Vellvehi, ...
IEEE transactions on Power Electronics 29 (5), 2261-2271, 2013
732013
SiC integrated circuit control electronics for high-temperature operation
M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ...
IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014
572014
Use of ASICs in PWM techniques for power converters
JM Retif, B Allard, X Jorda, A Perez
Proceedings of IECON'93-19th Annual Conference of IEEE Industrial …, 1993
481993
Irradiance-based emissivity correction in infrared thermography for electronic applications
M Vellvehi, X Perpiñà, GL Lauro, F Perillo, X Jordà
Review of scientific instruments 82 (11), 114901, 2011
472011
Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions
X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ...
IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010
472010
Reliability and safety in railway
X Perpinya
BoD–Books on Demand, 2012
462012
Long-term reliability of railway power inverters cooled by heat-pipe-based systems
X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet
IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010
452010
High-frequency ultrasonic atomization with pulsed excitation
A Lozano, H Amaveda, F Barreras, X Jorda, M Lozano
J. Fluids Eng. 125 (6), 941-945, 2003
402003
IGBT module failure analysis in railway applications
X Perpina, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ...
Microelectronics Reliability 48 (8-9), 1427-1431, 2008
382008
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ...
Journal of Applied Physics 105 (11), 114510, 2009
372009
Schottky versus bipolar 3.3 kV SiC diodes
A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ...
Semiconductor science and technology 23 (12), 125004, 2008
332008
Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs
M Fernandez, X Perpina, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ...
IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017
322017
Bipolar conduction impact on electrical characteristics and reliability of 1.2-and 3.5-kV 4H-SiC JBS diodes
P Brosselard, N Camara, V Banu, X Jordà, M Vellvehi, P Godignon, ...
IEEE Transactions on Electron Devices 55 (8), 1847-1856, 2008
322008
Thermal resistance investigations on new leadframe-based LED packages and boards
B Pardo, A Gasse, A Fargeix, J Jakovenko, RJ Werkhoven, X Perpiñà, ...
Microelectronics Reliability 53 (8), 1084-1094, 2013
302013
Internal infrared laser deflection system: a tool for power device characterization
X Perpiñà, X Jordà, N Mestres, M Vellvehi, P Godignon, J Millán, ...
Measurement Science and Technology 15 (5), 1011, 2004
292004
P-GaN HEMTs drain and gate current analysis under short-circuit
M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack
IEEE Electron Device Letters 38 (4), 505-508, 2017
272017
Coupled electro-thermal simulation of a DC/DC converter
M Vellvehi, X Jorda, P Godignon, C Ferrer, J Millán
Microelectronics Reliability 47 (12), 2114-2121, 2007
262007
Reduced-order thermal behavioral model based on diffusive representation
B Allard, X Jorda, P Bidan, A Rumeau, H Morel, X Perpina, M Vellvehi, ...
IEEE transactions on power electronics 24 (12), 2833-2846, 2009
242009
Power-substrate static thermal characterization based on a test chip
X Jorda, X Perpina, M Vellvehi, J Coleto
IEEE Transactions on Device and Materials reliability 8 (4), 671-679, 2008
222008
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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