| Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model S Yu, X Guan, HSP Wong Applied Physics Letters 99 (6), 2011 | 476 | 2011 |
| On the switching parameter variation of metal-oxide RRAM—Part I: Physical modeling and simulation methodology X Guan, S Yu, HSP Wong IEEE Transactions on electron devices 59 (4), 1172-1182, 2012 | 372 | 2012 |
| A SPICE compact model of metal oxide resistive switching memory with variations X Guan, S Yu, HSP Wong IEEE electron device letters 33 (10), 1405-1407, 2012 | 290 | 2012 |
| On the switching parameter variation of metal oxide RRAM—Part II: Model corroboration and device design strategy S Yu, X Guan, HSP Wong IEEE Transactions on Electron Devices 59 (4), 1183-1188, 2012 | 242 | 2012 |
| On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization S Yu, X Guan, HSP Wong 2011 International Electron Devices Meeting, 17.3. 1-17.3. 4, 2011 | 242 | 2011 |
| High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 179 | 2014 |
| Verilog-A compact model for oxide-based resistive random access memory (RRAM) Z Jiang, S Yu, Y Wu, JH Engel, X Guan, HSP Wong 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 145 | 2014 |
| First-principles investigation on bonding formation and electronic structure of metal-graphene contacts Q Ran, M Gao, X Guan, Y Wang, Z Yu Applied Physics Letters 94 (10), 2009 | 124 | 2009 |
| Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length J Luo, L Wei, CS Lee, AD Franklin, X Guan, E Pop, DA Antoniadis, ... IEEE transactions on electron devices 60 (6), 1834-1843, 2013 | 88 | 2013 |
| A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl Applied Physics Letters 100 (4), 2012 | 83 | 2012 |
| Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation S Yu, X Guan, HSP Wong 2012 International Electron Devices Meeting, 26.1. 1-26.1. 4, 2012 | 57 | 2012 |
| Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors J Kang, Y He, J Zhang, X Yu, X Guan, Z Yu Applied Physics Letters 96 (25), 2010 | 39 | 2010 |
| Complex band structures: From parabolic to elliptic approximation X Guan, D Kim, KC Saraswat, HSP Wong IEEE electron device letters 32 (9), 1296-1298, 2011 | 38 | 2011 |
| Molecular dynamics study of the switching mechanism of carbon-based resistive memory Y He, J Zhang, X Guan, L Zhao, Y Wang, H Qian, Z Yu IEEE Transactions on Electron Devices 57 (12), 3434-3441, 2010 | 34 | 2010 |
| InGaSb: Single channel solution for realizing III–V CMOS Z Yuan, A Nainani, A Kumar, X Guan, BR Bennett, JB Boos, MG Ancona, ... 2012 Symposium on VLSI Technology (VLSIT), 185-186, 2012 | 30 | 2012 |
| Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in-Based Unipolar Resistive Memory L Zhao, J Zhang, Y He, X Guan, H Qian, Z Yu IEEE electron device letters 32 (5), 677-679, 2011 | 27 | 2011 |
| Supercell approach in tight-binding calculation of Si and Ge nanowire bandstructures G Xi-Meng, Y Zhi-Ping Chinese Physics Letters 22, 2651, 2005 | 22 | 2005 |
| Simulation investigation of double-gate CNR-MOSFETs with a fully self-consistent NEGF and TB method X Guan, M Zhang, Q Liu, Z Yu 2007 IEEE International Electron Devices Meeting, 761-764, 2007 | 21 | 2007 |
| Recent progress of resistive switching random access memory (RRAM) Y Wu, S Yu, X Guan, HSP Wong 2012 IEEE Silicon Nanoelectronics Workshop (SNW), 1-4, 2012 | 15 | 2012 |
| On the variability of HfOx RRAM: From numerical simulation to compact modeling X Guan, S Yu, HSP Wong Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and …, 2012 | 13 | 2012 |
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityVerified email at stanford.edu
