| Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film M Wolz, C Hauswald, T Flissikowski, T Gotschke, S Fernández-Garrido, ... Nano letters 15 (6), 3743-3747, 2015 | 73 | 2015 |
| Current path in light emitting diodes based on nanowire ensembles F Limbach, C Hauswald, J Lähnemann, M Wölz, O Brandt, A Trampert, ... Nanotechnology 23 (46), 465301, 2012 | 65 | 2012 |
| Photoelectrochemical properties of (In, Ga) N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ... Journal of the American Chemical Society 135 (28), 10242-10245, 2013 | 64 | 2013 |
| Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ... Physical Review B 90 (19), 195309, 2014 | 52 | 2014 |
| Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence S Fernández-Garrido, VM Kaganer, C Hauswald, B Jenichen, ... Nanotechnology 25 (45), 455702, 2014 | 51 | 2014 |
| Control over the number density and diameter of GaAs nanowires on Si (111) mediated by droplet epitaxy C Somaschini, S Bietti, A Trampert, U Jahn, C Hauswald, H Riechert, ... Nano letters 13 (8), 3607-3613, 2013 | 49 | 2013 |
| Origin of the nonradiative decay of bound excitons in GaN nanowires C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ... Physical Review B 90 (16), 165304, 2014 | 38 | 2014 |
| Luminous Efficiency of Axial InxGa1–xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials O Marquardt, C Hauswald, M Wölz, L Geelhaar, O Brandt Nano letters 13 (7), 3298-3304, 2013 | 37 | 2013 |
| Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ... Nano letters 16 (2), 973-980, 2016 | 35 | 2016 |
| Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ... Physical Review B 90 (20), 205301, 2014 | 33 | 2014 |
| High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ... Crystal Growth & Design 15 (8), 4104-4109, 2015 | 31 | 2015 |
| Correlation between In content and emission wavelength of InxGa1− xN/GaN nanowire heterostructures M Wölz, J Lähnemann, O Brandt, VM Kaganer, M Ramsteiner, C Pfüller, ... Nanotechnology 23 (45), 455203, 2012 | 30 | 2012 |
| Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires C Hauswald, T Flissikowski, T Gotschke, R Calarco, L Geelhaar, ... Physical Review B 88 (7), 075312, 2013 | 28 | 2013 |
| Localization and defects in axial (In, Ga) N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy J Lähnemann, C Hauswald, M Wölz, U Jahn, M Hanke, L Geelhaar, ... Journal of Physics D: Applied Physics 47 (39), 394010, 2014 | 21 | 2014 |
| Luminous efficiency of ordered arrays of GaN nanowires with subwavelength diameters C Hauswald, I Giuntoni, T Flissikowski, T Gotschke, R Calarco, HT Grahn, ... ACS Photonics 4 (1), 52-62, 2017 | 19 | 2017 |
| Investigation on the origin of luminescence quenching in N-polar (In, Ga) N multiple quantum wells C Cheze, M Siekacz, G Muzioł, H Turski, S Grzanka, M Kryśko, JL Weyher, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013 | 16 | 2013 |
| Indium Incorporation in InxGa1–xN/GaN Nanowire Heterostructures Investigated by Line-of-Sight Quadrupole Mass Spectrometry M Wölz, S Fernández-Garrido, C Hauswald, O Brandt, F Limbach, ... Crystal growth & design 12 (11), 5686-5692, 2012 | 15 | 2012 |
| Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si (111) C Pfüller, P Corfdir, C Hauswald, T Flissikowski, X Kong, JK Zettler, ... Physical Review B 94 (15), 155308, 2016 | 14 | 2016 |
| Comparison of the Luminous Efficiencies of Ga-and N-Polar In x Ga 1− x N/In y Ga 1− y N Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy S Fernández-Garrido, J Lähnemann, C Hauswald, M Korytov, M Albrecht, ... Physical Review Applied 6 (3), 034017, 2016 | 13 | 2016 |
| Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films VM Kaganer, B Jenichen, M Ramsteiner, U Jahn, C Hauswald, F Grosse, ... Journal of Physics D: Applied Physics 48 (38), 385105, 2015 | 13 | 2015 |
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
