| Radiation damage in wide and ultra-wide bandgap semiconductors SJ Pearton, A Aitkaliyeva, M Xian, F Ren, A Khachatrian, A Ildefonso, ... ECS Journal of Solid State Science and Technology 10 (5), 055008, 2021 | 76 | 2021 |
| Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ... Applied Physics Letters 114 (23), 2019 | 69 | 2019 |
| New methods for assessing electron storage capacity and redox reversibility of biochar D Xin, M Xian, PC Chiu Chemosphere 215, 827-834, 2019 | 54 | 2019 |
| Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers J Yang, C Fares, R Elhassani, M Xian, F Ren, SJ Pearton, M Tadjer, ... ECS Journal of Solid State Science and Technology 8 (7), Q3159, 2019 | 50 | 2019 |
| Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers R Sharma, M Xian, C Fares, ME Law, M Tadjer, KD Hobart, F Ren, ... Journal of Vacuum Science & Technology A 39 (1), 2021 | 44 | 2021 |
| Demonstration of a SiC protective coating for titanium implants C Fares, SM Hsu, M Xian, X Xia, F Ren, JJ Mecholsky Jr, L Gonzaga, ... Materials 13 (15), 3321, 2020 | 32 | 2020 |
| Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, AA Vasilev, EB Yakimov, ... Journal of Physics D: Applied Physics 53 (27), 274001, 2020 | 32 | 2020 |
| On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors EB Yakimov, AY Polyakov, IV Shchemerov, NB Smirnov, AA Vasilev, ... Journal of Alloys and Compounds 879, 160394, 2021 | 26 | 2021 |
| Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers M Xian, R Elhassani, C Fares, F Ren, M Tadjer, SJ Pearton Journal of Vacuum Science & Technology B 37 (6), 2019 | 25 | 2019 |
| Diffusion of implanted Ge and Sn in β-Ga2O3 R Sharma, ME Law, M Xian, M Tadjer, EA Anber, D Foley, AC Lang, ... Journal of Vacuum Science & Technology B 37 (5), 2019 | 25 | 2019 |
| Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600° C M Xian, C Fares, F Ren, BP Gila, YT Chen, YT Liao, M Tadjer, SJ Pearton Journal of Vacuum Science & Technology B 37 (6), 2019 | 23 | 2019 |
| Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers EB Yakimov, AY Polyakov, NB Smirnov, IV Shchemerov, PS Vergeles, ... Journal of Physics D: Applied Physics 53 (49), 495108, 2020 | 21 | 2020 |
| Vertical β-Ga2O3 Schottky rectifiers with 750 V reverse breakdown voltage at 600 K X Xia, M Xian, P Carey, C Fares, F Ren, M Tadjer, SJ Pearton, TQ Tu, ... Journal of Physics D: Applied Physics 54 (30), 305103, 2021 | 20 | 2021 |
| In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Z Islam, M Xian, A Haque, F Ren, M Tadjer, N Glavin, S Pearton IEEE Transactions on Electron Devices 67 (8), 3056-3061, 2020 | 19 | 2020 |
| Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform M Xian, H Luo, X Xia, C Fares, PH Carey, CW Chiu, F Ren, SS Shan, ... Journal of Vacuum Science & Technology B 39 (3), 2021 | 16 | 2021 |
| Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers S Modak, L Chernyak, S Khodorov, I Lubomirsky, A Ruzin, M Xian, F Ren, ... ECS Journal of Solid State Science and Technology 9 (4), 045018, 2020 | 15 | 2020 |
| Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga2O3 Rectifiers M Xian, C Fares, F Ren, Z Islam, A Haque, M Tadjer, SJ Pearton ECS Journal of Solid State Science and Technology 9 (3), 035007, 2020 | 15 | 2020 |
| Temperature dependent performance of ITO Schottky contacts on β-Ga2O3 X Xia, M Xian, C Fares, F Ren, M Tadjer, SJ Pearton Journal of Vacuum Science & Technology A 39 (5), 2021 | 14 | 2021 |
| Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle-and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers S Modak, L Chernyak, A Schulte, M Xian, F Ren, SJ Pearton, I Lubomirsky, ... Applied Physics Letters 118 (20), 2021 | 12 | 2021 |
| Chemical methods for determining the electron storage capacity of black carbon D Xin, M Xian, PC Chiu MethodsX 5, 1515-1520, 2018 | 12 | 2018 |
Pei C. ChiuDepartment of Civil + Environmental Engineering, University of DelawareDirección de correo verificada de udel.edu
