| Resistive switching in natural silk fibroin protein‐based bio‐memristors C Mukherjee, MK Hota, D Naskar, SC Kundu, CK Maiti physica status solidi (a) 210 (9), 1797-1805, 2013 | 57 | 2013 |
| Strain-engineered mosfets CK Maiti, TK Maiti CRC Press, 2012 | 50 | 2012 |
| Reliability-aware circuit design methodology for beyond-5G communication systems C Mukherjee, B Ardouin, JY Dupuy, V Nodjiadjim, M Riet, T Zimmer, ... IEEE Transactions on Device and Materials Reliability 17 (3), 490-506, 2017 | 34 | 2017 |
| An accurate physics-based compact model for dual-gate bilayer graphene FETs JD Aguirre-Morales, S Frégonèse, C Mukherjee, C Maneux, T Zimmer IEEE Transactions on Electron Devices 62 (12), 4333-4339, 2015 | 28 | 2015 |
| Hot-carrier degradation in SiGe HBTs: A physical and versatile aging compact model C Mukherjee, T Jacquet, GG Fischer, T Zimmer, C Maneux IEEE Transactions on Electron Devices 64 (12), 4861-4867, 2017 | 27 | 2017 |
| A large-signal monolayer graphene field-effect transistor compact model for RF-circuit applications JD Aguirre-Morales, S Frégonèse, C Mukherjee, W Wei, H Happy, ... IEEE Transactions on Electron Devices 64 (10), 4302-4309, 2017 | 27 | 2017 |
| Versatile compact model for graphene FET targeting reliability-aware circuit design C Mukherjee, JD Aguirre-Morales, S Fregonese, T Zimmer, C Maneux IEEE Transactions on Electron Devices 62 (3), 757-763, 2015 | 27 | 2015 |
| Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates C Mukherjee, T Das, C Mahata, CK Maiti, CK Chia, SY Chiam, DZ Chi, ... ACS Applied Materials & Interfaces 6 (5), 3263-3274, 2014 | 26 | 2014 |
| Nanowires: Recent Advances X Peng BoD–Books on Demand, 2012 | 24 | 2012 |
| Scalable compact modeling of III–V DHBTs: Prospective figures of merit toward terahertz operation C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, T Zimmer, ... IEEE Transactions on Electron Devices 65 (12), 5357-5364, 2018 | 21 | 2018 |
| Low-frequency noise in advanced SiGe: C HBTs—Part I: Analysis C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Böck, K Aufinger, ... IEEE Transactions on Electron Devices 63 (9), 3649-3656, 2016 | 18 | 2016 |
| Towards monolithic indium phosphide (InP)-based electronic photonic technologies for beyond 5G communication systems C Mukherjee, M Deng, V Nodjiadjim, M Riet, C Mismer, D Guendouz, ... Applied Sciences 11 (5), 2393, 2021 | 17 | 2021 |
| Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design C Mukherjee, A Poittevin, I O'Connor, G Larrieu, C Maneux Solid-State Electronics 183, 108125, 2021 | 16 | 2021 |
| Efficient compact modelling of UTC-photodiode towards terahertz communication system design C Mukherjee, M Natrella, J Seddon, C Graham, P Mounaix, CC Renaud, ... Solid-State Electronics 170, 107836, 2020 | 14 | 2020 |
| A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions C Mukherjee, F Marc, M Couret, GG Fischer, M Jaoul, D Céli, K Aufinger, ... Solid-State Electronics 163, 107635, 2020 | 13 | 2020 |
| A multiscale TCAD approach for the simulation of InP DHBTs and the extraction of their transit times X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, ... IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019 | 13 | 2019 |
| Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence C Maneux, C Mukherjee, M Deng, M Dubourg, L Réveil, G Bordea, ... 2021 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2021 | 11 | 2021 |
| Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs M Couret, M Jaoul, F Marc, C Mukherjee, D Céli, T Zimmer, C Maneux Solid-State Electronics 169, 107819, 2020 | 11 | 2020 |
| Scalable modeling of thermal impedance in InP DHBTs targeting terahertz applications C Mukherjee, M Couret, V Nodjiadjim, M Riet, JY Dupuy, S Fregonese, ... IEEE Transactions on Electron Devices 66 (5), 2125-2131, 2019 | 11 | 2019 |
| Low-frequency noise in advanced SiGe: C HBTs—Part II: Correlation and modeling C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Böck, K Aufinger, ... IEEE Transactions on Electron Devices 63 (9), 3657-3662, 2016 | 11 | 2016 |
MRINAL KANTI HOTAUniversity of Illinois Urbana-ChampaignVerified email at illinois.edu
