<? A3B2 tlsb-0.01 w?> Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride J Kischkat, S Peters, B Gruska, M Semtsiv, M Chashnikova, M Klinkmüller, ...
Applied optics 51 (28), 6789-6798, 2012
1113 2012 " Dressed excitons" in a multiple-quantum-well structure: evidence for an optical Stark effect with femtosecond response time A Mysyrowicz, D Hulin, A Antonetti, A Migus, WT Masselink, H Morkoc
Physical review letters 56 (25), 2748, 1986
668 1986 Comprehensive analysis of Si-doped Al x Ga 1− x As (x= 0 to 1): Theory and experiments N Chand, T Henderson, J Klem, WT Masselink, R Fischer, YC Chang, ...
Physical Review B 30 (8), 4481, 1984
525 1984 Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices WT Masselink, PJ Pearah, J Klem, CK Peng, H Morkoc, GD Sanders, ...
Physical Review B 32 (12), 8027, 1985
235 1985 Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy R Fischer, WT Masselink, J Klem, T Henderson, TC McGlinn, MV Klein, ...
Journal of Applied Physics 58 (1), 374-381, 1985
234 1985 Modulation-doped gaas/(al, ga) as heterojunction field-effect transistors: Modfets TJ Drummond, WT Masselink, H Morkoc
Proceedings of the IEEE 74 (6), 773-822, 1986
217 1986 Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power K Rivoire, Z Lin, F Hatami, WT Masselink, J Vučković
Optics express 17 (25), 22609-22615, 2009
211 2009 Acceptor spectra of Al x Ga 1− x As-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress WT Masselink, YC Chang, H Morkoc
Physical Review B 32 (8), 5190, 1985
205 1985 Binding energies of acceptors in GaAs- WT Masselink, YC Chang, H Morkoc
Physical Review B 28 (12), 7373, 1983
196 1983 Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors AA Ketterson, WT Masselink, JS Gedymin, J Klem, CK Peng, WF Kopp, ...
IEEE transactions on electron devices 33 (5), 564-571, 1986
157 1986 Well-size dependence of exciton blue shift in GaAs multiple-quantum-well structures D Hulin, A Mysyrowicz, A Antonetti, A Migus, WT Masselink, H Morkoc, ...
Physical Review B 33 (6), 4389, 1986
150 1986 Influence of tip-induced band bending on tunnelling spectra of semiconductorsurfaces RM Feenstra, Y Dong, MP Semtsiv, WT Masselink
Nanotechnology 18 (4), 044015, 2006
149 2006 Ultrafast all-optical gate with subpicosecond ON and OFF response time D Hulin, A Mysyrowicz, A Antonetti, A Migus, WT Masselink
Applied physics letters 49 (13), 749-751, 1986
142 1986 Mid-IR hyperspectral imaging for label-free histopathology and cytology M Hermes, RB Morrish, L Huot, L Meng, S Junaid, J Tomko, GR Lloyd, ...
Journal of Optics 20 (2), 023002, 2018
126 2018 Optical properties of GaAs on (100) Si using molecular beam epitaxy WT Masselink, T Henderson, J Klem, R Fischer, P Pearah, H Morkoc, ...
Applied physics letters 45 (12), 1309-1311, 1984
125 1984 Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon R Fischer, T Henderson, J Klem, WT Masselink, W Kopp, H Morkoc, ...
Electronics Letters 20 (22), 945-947, 1984
119 1984 Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage H Kissel, U Müller, C Walther, WT Masselink, YI Mazur, GG Tarasov, ...
Physical Review B 62 (11), 7213, 2000
114 2000 Short-wavelength (λ≈ 3.05 μm) InP-based strain-compensated quantum-cascade laser MP Semtsiv, M Wienold, S Dressler, WT Masselink
Applied physics letters 90 (5), 2007
113 2007 Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor B Globisch, RJB Dietz, RB Kohlhaas, T Göbel, M Schell, D Alcer, ...
Journal of Applied Physics 121 (5), 2017
110 2017 Mobility and carrier density in materials with anisotropic conductivity revealed by van der Pauw measurements O Bierwagen, R Pomraenke, S Eilers, WT Masselink
Physical Review B—Condensed Matter and Materials Physics 70 (16), 165307, 2004
107 2004 