Lourdes Pelaz
TitleCited byYear
Ion-beam-induced amorphization and recrystallization in silicon
L Pelaz, LA Marqués, J Barbolla
Journal of applied physics 96 (11), 5947-5976, 2004
3442004
B diffusion and clustering in ion implanted Si: The role of B cluster precursors
L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, ...
Applied physics letters 70 (17), 2285-2287, 1997
2491997
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
L Pelaz, GH Gilmer, HJ Gossmann, CS Rafferty, M Jaraiz, J Barbolla
Applied physics letters 74 (24), 3657-3659, 1999
1901999
Stability of defects in crystalline silicon and their role in amorphization
LA Marqués, L Pelaz, J Hernández, J Barbolla, GH Gilmer
Physical Review B 64 (4), 045214, 2001
1302001
Reduction of transient diffusion from 1–5 keV ion implantation due to surface annihilation of interstitials
A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ...
Applied physics letters 71 (21), 3141-3143, 1997
1101997
Reduction of transient diffusion from 1–5 keV ion implantation due to surface annihilation of interstitials
A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ...
Applied physics letters 71 (21), 3141-3143, 1997
1101997
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
A Agarwal, HJ Gossmann, DJ Eaglesham, SB Herner, AT Fiory, ...
Applied physics letters 74 (17), 2435-2437, 1999
941999
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
VC Venezia, TE Haynes, A Agarwal, L Pelaz, HJ Gossmann, ...
Applied physics letters 74 (9), 1299-1301, 1999
891999
Atomistic modeling of point and extended defects in crystalline materials
M Jaraiz, L Pelaz, E Rubio, J Barbolla, GH Gilmer, DJ Eaglesham, ...
MRS Online Proceedings Library Archive 532, 1998
831998
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
LA Marqués, L Pelaz, P Castrillo, J Barbolla
Physical Review B 71 (8), 085204, 2005
802005
Atomistic modeling of amorphization and recrystallization in silicon
L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer
Applied physics letters 82 (13), 2038-2040, 2003
792003
Microscopic description of the irradiation-induced amorphization in silicon
LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla
Physical review letters 91 (13), 135504, 2003
782003
Activation and deactivation of implanted B in Si
L Pelaz, VC Venezia, HJ Gossmann, GH Gilmer, AT Fiory, CS Rafferty, ...
Applied physics letters 75 (5), 662-664, 1999
741999
Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+ 1” model
L Pelaz, GH Gilmer, M Jaraiz, SB Herner, HJ Gossmann, DJ Eaglesham, ...
Applied physics letters 73 (10), 1421-1423, 1998
691998
Boron diffusion in amorphous silicon and the role of fluorine
R Duffy, VC Venezia, A Heringa, BJ Pawlak, MJP Hopstaken, GCJ Maas, ...
Applied physics letters 84 (21), 4283-4285, 2004
602004
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
L Pelaz, GH Gilmer, VC Venezia, HJ Gossmann, M Jaraiz, J Barbolla
Applied physics letters 74 (14), 2017-2019, 1999
541999
Modeling of damage generation mechanisms in silicon at energies below the displacement threshold
I Santos, LA Marqués, L Pelaz
Physical Review B 74 (17), 174115, 2006
492006
Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ...
Applied physics letters 83 (20), 4166-4168, 2003
442003
Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon
A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, SB Herner, ...
Materials Science in Semiconductor Processing 1 (1), 17-25, 1998
441998
Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
A Agarwal, DJ Eaglesham, HJ Gossmann, L Pelaz, SB Herner, ...
International Electron Devices Meeting. IEDM Technical Digest, 467-470, 1997
431997
The system can't perform the operation now. Try again later.
Articles 1–20