| Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions JZ Sun, SL Brown, W Chen, EA Delenia, MC Gaidis, J Harms, G Hu, ... Physical review B 88 (10), 104426, 2013 | 122 | 2013 |
| Growth and characterization of vanadium dioxide thin films prepared by reactive-biased target ion beam deposition KG West, J Lu, J Yu, D Kirkwood, W Chen, Y Pei, J Claassen, SA Wolf Journal of Vacuum Science & Technology A 26 (1), 133-139, 2008 | 111 | 2008 |
| STT-MRAM with double magnetic tunnel junctions G Hu, JH Lee, JJ Nowak, JZ Sun, J Harms, A Annunziata, S Brown, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2015 | 95 | 2015 |
| Propagation of exchange bias in CoFe∕ FeMn∕ CoFe trilayers DNH Nam, W Chen, KG West, DM Kirkwood, J Lu, SA Wolf Applied Physics Letters 93 (15), 152504-152504-3, 2008 | 55 | 2008 |
| Ferromagnetism in Rutile Structure Cr Doped VO2 Thin Films Prepared by Reactive-Bias Target Ion Beam Deposition KG West, J Lu, L He, D Kirkwood, W Chen, TP Adl, MS Osofsky, SB Qadri, ... Journal of superconductivity and novel magnetism 21, 87-92, 2008 | 44 | 2008 |
| Magnetic cell structures, and methods of fabrication W Chen, JD Harms, S Murthy US Patent 9,768,377, 2017 | 37 | 2017 |
| Memory cells, methods of fabrication, semiconductor device structures, and memory systems W Chen, S Murthy, W Kula US Patent 9,379,315, 2016 | 33 | 2016 |
| Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory R Carboni, S Ambrogio, W Chen, M Siddik, J Harms, A Lyle, W Kula, ... 2016 IEEE International Electron Devices Meeting (IEDM), 21.6. 1-21.6. 4, 2016 | 30 | 2016 |
| Epitaxial τ phase MnAl thin films on MgO (001) with thickness-dependent magnetic anisotropy Y Cui, W Yin, W Chen, J Lu, SA Wolf Journal of Applied Physics 110 (10), 2011 | 29 | 2011 |
| Random number generation by differential read of stochastic switching in spin-transfer torque memory R Carboni, W Chen, M Siddik, J Harms, A Lyle, W Kula, G Sandhu, ... IEEE Electron Device Letters 39 (7), 951-954, 2018 | 24 | 2018 |
| Modeling of breakdown-limited endurance in spin-transfer torque magnetic memory under pulsed cycling regime R Carboni, S Ambrogio, W Chen, M Siddik, J Harms, A Lyle, W Kula, ... IEEE Transactions on Electron Devices 65 (6), 2470-2478, 2018 | 23 | 2018 |
| Magnetic tunnel junctions JD Harms, W Chen, SS Murthy US Patent 9,537,088, 2017 | 14 | 2017 |
| Low-current spin transfer torque MRAM G Hu, JJ Nowak, G Lauer, JH Lee, JZ Sun, J Harms, A Annunziata, ... 2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 1-2, 2017 | 12 | 2017 |
| Effects of target bias voltage in magnetic tunnel junctions grown by ion beam deposition W Chen, DNH Nam, J Lu, KG West, SA Wolf Journal of Applied Physics 106 (1), 2009 | 12 | 2009 |
| Magnetic tunnel junctions W Chen, W Kula, M Siddik, S Ramarajan, JD Harms US Patent 9,680,089, 2017 | 4 | 2017 |
| Methods of forming memory cells, arrays of magnetic memory cells, and semiconductor devices W Chen, S Murthy, W Kula US Patent 9,972,770, 2018 | 2 | 2018 |
| Low-current spin transfer torque MRAM D Worledge, AJ Annunziata, S Brown, W Chen, J Harms, G Hu, Y Kim, ... 2015 IEEE International Magnetics Conference (INTERMAG), 1-1, 2015 | 2 | 2015 |
| Detection of bottom ferromagnetic electrode oxidation in magnetic tunnel junctions by magnetometry measurements W Chen, DNH Nam, J Lu, SA Wolf Journal of Applied Physics 108 (11), 2010 | 2 | 2010 |
| Magnetoresistive structures, semiconductor devices, and related systems W Chen, S Murthy, W Kula US Patent 10,276,781, 2019 | 1 | 2019 |
| Magnetic tunnel junctions JD Harms, W Chen, SS Murthy, W Kula US Patent 9,960,346, 2018 | 1 | 2018 |
SA WolfUniversity of VirginiaVerified email at virginia.edu
