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Danilyuk Alexander  L
Danilyuk Alexander L
Белорусский государственный университет информатики и радиоэлектроники
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Materials surface modification using quasi-stationary plasma accelerators
VM Astashynski, SI Ananin, VV Askerko, EA Kostyukevich, AM Kuzmitski, ...
Surface and Coatings Technology 180, 392-395, 2004
842004
Compressive plasma flows interaction with steel surface: structure and mechanical properties of modified layer
VM Anishchik, VV Uglov, VV Astashynski, VM Astashynski, SI Ananin, ...
Vacuum 70 (2-3), 269-274, 2003
642003
Microwave absorption in nanocomposite material of magnetically functionalized carbon nanotubes
VA Labunov, AL Danilyuk, AL Prudnikava, I Komissarov, BG Shulitski, ...
Journal of Applied Physics 112 (2), 2012
522012
The effect of dense compression plasma flow on silicon surface morphology
VV Uglov, VM Anishchik, VV Astashynski, VM Astashynski, SI Ananin, ...
Surface and Coatings Technology 158, 273-276, 2002
492002
Interplay between exchange interaction and magnetic anisotropy for iron based nanoparticles in aligned carbon nanotube arrays
AL Danilyuk, AL Prudnikava, IV Komissarov, KI Yanushkevich, A Derory, ...
Carbon 68, 337-345, 2014
402014
Deposition of nanostructured metal coatings on the modified silicon surfaces in the magnetoplasma compressor
VM Astashynski, SI Ananin, VV Askerko, EA Kostyukevich, AM Kuzmitski, ...
Vacuum 78 (2-4), 157-160, 2005
332005
Magnetostatic field influence on electrodeposition on metal films
AL Danilyuk, VI Kurmashev, AL Matyushkov
Thin Solid Films 189 (2), 247-255, 1990
271990
Comprehensive modification of semiconductors and metals providing new structural features of surface layers subjected to compression plasma flows
VM Astashinski, SI Ananin, EA Kostyukevich, AM Kuzmitski, VV Uglov, ...
High Temperature Material Processes: An International Quarterly of High …, 2007
252007
Formation of submicron cylindrical structures at silicon surface exposed to a compression plasma flow
VV Uglov, VM Anishchik, VV Astashynski, VM Astashynski, SI Ananin, ...
Journal of Experimental and Theoretical Physics Letters 74, 213-215, 2001
252001
Manifestation of coherent magnetic anisotropy in a carbon nanotube matrix with low ferromagnetic nanoparticle content
AL Danilyuk, IV Komissarov, VA Labunov, F Le Normand, A Derory, ...
New Journal of Physics 17 (2), 023073, 2015
242015
Carrier transport and related phenomena in nanosize periodic silicon/insulator structures
JA Berashevich, AL Danilyuk, AN Kholod, VE Borisenko
Materials Science and Engineering: B 101 (1-3), 111-118, 2003
232003
Structural and phase composition changes in aluminium induced by carbon implantation
VV Uglov, NN Cherenda, AL Danilyuk, B Rauschenbach
Surface and Coatings Technology 128, 358-363, 2000
222000
Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio study
MS Baranava, DC Hvazdouski, VA Skachkova, VR Stempitsky, ...
Materials Today: Proceedings 20, 342-347, 2020
212020
Electroluminescence simulation of multiquantum well silicon structures
AN Kholod, AL Danilyuk, VE Borisenko, F Bassani, S Menard, ...
Journal of applied physics 85 (10), 7219-7223, 1999
181999
Formation of complex Al–N–C layer in aluminium by successive carbon and nitrogen implantation
VV Uglov, NN Cherenda, VV Khodasevich, VA Sokol, II Abramov, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
181999
Evolution of microstructure of instrumental AISI M2 steel after plasma immersion nitrogen and carbon implantation
VV Uglov, JA Fedotova, AK Kuleshov, AL Danilyuk, NT Kvasov, R Günzel, ...
Surface and Coatings Technology 136 (1-3), 226-230, 2001
162001
Negative differential resistance in n-type noncompensated silicon at low temperature
AL Danilyuk, AG Trafimenko, AK Fedotov, IA Svito, SL Prischepa
Applied Physics Letters 109 (22), 2016
152016
The effect of Ti ions implantation on the structure of anodic alumina films
NN Cherenda, VV Uglov, GV Litvinovich, AL Danilyuk
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003
152003
Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps
YA Berashevich, AL Danilyuk, AN Kholod, VE Borisenko
Semiconductors 35, 112-116, 2001
152001
Electron density and potential distribution at a plasma-insulator interface
EE Tkharev, AL Danilyuk
Vacuum 35 (4-5), 183-187, 1985
131985
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