| Physically based models of electromigration: From Black’s equation to modern TCAD models RL De Orio, H Ceric, S Selberherr Microelectronics Reliability 50 (6), 775-789, 2010 | 177 | 2010 |
| Electromigration in submicron interconnect features of integrated circuits H Ceric, S Selberherr Materials Science and Engineering: R: Reports 71 (5-6), 53-86, 2011 | 109 | 2011 |
| Interface traps density-of-states as a vital component for hot-carrier degradation modeling SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ... Microelectronics Reliability 50 (9-11), 1267-1272, 2010 | 77 | 2010 |
| Through silicon via reliability C Cassidy, J Kraft, S Carniello, F Roger, H Ceric, AP Singulani, E Langer, ... IEEE Transactions on Device and Materials Reliability 12 (2), 285-295, 2012 | 70 | 2012 |
| Stress, sheet resistance, and microstructure evolution of electroplated Cu films during self-annealing R Huang, W Robl, H Ceric, T Detzel, G Dehm IEEE transactions on device and materials reliability 10 (1), 47-54, 2009 | 67 | 2009 |
| A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects H Ceric, RL de Orio, J Cervenka, S Selberherr IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008 | 62 | 2008 |
| Hot-carrier degradation caused interface state profile—Simulation versus experiment I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 44 | 2011 |
| Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ... IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015 | 41 | 2015 |
| Electromigration failure in a copper dual-damascene structure with a through silicon via RL de Orio, H Ceric, S Selberherr Microelectronics Reliability 52 (9-10), 1981-1986, 2012 | 37 | 2012 |
| Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ... 2011 International Conference on Simulation of Semiconductor Processes and …, 2011 | 36 | 2011 |
| Optimization of the perfectly matched layer for the finite-element time-domain method M Movahhedi, A Abdipour, H Ceric, A Sheikholeslami, S Selberherr IEEE microwave and wireless components letters 17 (1), 10-12, 2007 | 30 | 2007 |
| A compact model for early electromigration failures of copper dual-damascene interconnects RL De Orio, H Ceric, S Selberherr Microelectronics Reliability 51 (9-11), 1573-1577, 2011 | 29 | 2011 |
| Microstructure and stress aspects of electromigration modeling H Ceric, R Heinzl, C Hollauer, T Grasser, S Selberherr AIP Conference Proceedings 817 (1), 262-268, 2006 | 29 | 2006 |
| Hot-carrier degradation modeling using full-band Monte-Carlo simulations SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ... 2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010 | 27 | 2010 |
| An adaptive grid approach for the simulation of electromigration induced void migration H Ceric, S Selberherr IEICE transactions on electronics 86 (3), 421-426, 2003 | 21 | 2003 |
| Analysis of electromigration failure of nano-interconnects through a combination of modeling and experimental methods H Ceric, H Zahedmanesh, K Croes Microelectronics Reliability 100, 113362, 2019 | 17 | 2019 |
| The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n-and p-channel LDMOS devices P Sharma, S Tyaginov, M Jech, Y Wimmer, F Rudolf, H Enichlmair, ... Solid-State Electronics 115, 185-191, 2016 | 17 | 2016 |
| Impact of NBTI-driven parameter degradation on lifetime of a 90nm p-MOSFET R Wittmann, H Puchner, L Hinh, H Ceric, A Gehring, S Selberherr 2005 IEEE International Integrated Reliability Workshop, 4 pp., 2005 | 14 | 2005 |
| Apparatus for measuring local stress of metallic films, using an array of parallel laser beams during rapid thermal processing R Huang, CA Taylor, S Himmelsbach, H Ceric, T Detzel Measurement Science and Technology 21 (5), 055702, 2010 | 13 | 2010 |
| Modeling methods for analysis of electromigration degradation in nano-interconnects H Ceric, S Selberherr, H Zahedmanesh, RL de Orio, K Croes ECS Journal of Solid State Science and Technology 10 (3), 035003, 2021 | 11 | 2021 |
Siegfried SelberherrInstitute for Microelectronics, TU WienDirección de correo verificada de TUWien.ac.at
