| MOVPE‐growth of InGaSb/AlP/GaP (001) quantum dots for nanoscale memory applications EM Sala, IF Arikan, L Bonato, F Bertram, P Veit, J Christen, A Strittmatter, ... physica status solidi (b) 255 (12), 1800182, 2018 | 32 | 2018 |
| 230 s room-temperature storage time and 1.14 eV hole localization energy in In0. 5Ga0. 5As quantum dots on a GaAs interlayer in GaP with an AlP barrier L Bonato, EM Sala, G Stracke, T Nowozin, A Strittmatter, MN Ajour, ... Applied Physics Letters 106 (4), 2015 | 31 | 2015 |
| Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix P Steindl, EM Sala, B Alén, DF Marrón, D Bimberg, P Klenovský Physical Review B 100 (19), 195407, 2019 | 29 | 2019 |
| Indirect and direct optical transitions in In0. 5Ga0. 5As/GaP quantum dots G Stracke, EM Sala, S Selve, T Niermann, A Schliwa, A Strittmatter, ... Applied Physics Letters 104 (12), 2014 | 27 | 2014 |
| Growth and structure of In0. 5Ga0. 5Sb quantum dots on GaP (001) EM Sala, G Stracke, S Selve, T Niermann, M Lehmann, S Schlichting, ... Applied Physics Letters 109 (10), 2016 | 22 | 2016 |
| Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots RSR Gajjela, AL Hendriks, JO Douglas, EM Sala, P Steindl, P Klenovský, ... Light: Science & Applications 10 (1), 125, 2021 | 18 | 2021 |
| InAs/InP quantum dots in etched pits by droplet epitaxy in metalorganic vapor phase epitaxy EM Sala, YI Na, M Godsland, A Trapalis, J Heffernan physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000173, 2020 | 18 | 2020 |
| Effect of cap thickness on InAs/InP quantum dots grown by droplet epitaxy in metal–organic vapor phase epitaxy EM Sala, M Godsland, A Trapalis, J Heffernan physica status solidi (RRL)–Rapid Research Letters 15 (9), 2100283, 2021 | 14 | 2021 |
| On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP (001) P Steindl, EM Sala, B Alén, D Bimberg, P Klenovský New Journal of Physics 23 (10), 103029, 2021 | 13 | 2021 |
| Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer EM Sala, M Godsland, YI Na, A Trapalis, J Heffernan Nanotechnology 33 (6), 065601, 2021 | 11 | 2021 |
| Ordered array of Ga droplets on GaAs (001) by local anodic oxidation EM Sala, M Bollani, S Bietti, A Fedorov, L Esposito, S Sanguinetti Journal of Vacuum Science & Technology B 32 (6), 2014 | 11 | 2014 |
| Control of morphology and substrate etching in InAs/InP droplet epitaxy quantum dots for single and entangled photon emitters RSR Gajjela, EM Sala, J Heffernan, PM Koenraad ACS Applied Nano Materials 5 (6), 8070-8079, 2022 | 8 | 2022 |
| Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories EM Sala | 8 | 2018 |
| Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity CL Phillips, AJ Brash, M Godsland, NJ Martin, A Foster, A Tomlinson, ... Scientific Reports 14 (1), 4450, 2024 | | 2024 |
| Self‐Assembled InAs Quantum Dots on InGaAsP/InP (100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications EM Sala, YI Na, M Godsland, J Heffernan physica status solidi (RRL)–Rapid Research Letters 18 (2), 2300340, 2024 | | 2024 |
| Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications EM Sala, P Klenovský New Journal of Physics 25 (11), 113012, 2023 | | 2023 |
| Structural, optical and electronic properties of (InGa)(AsSb)/GaAs quantum dots (QDs) on GaP (001) EM Sala, P Klenovský, P Steindl, A Schliwa, R Gajjela, AL Hendriks, ... | | |
| InGa (As, Sb) quantum dots (QDs) on GaP (001) substrates: effects of quantum confinement on electronic states. P Klenovsky, EM Sala, A Schliwa, D Bimberg | | |
Dieter BimbergCIOMP of CAS, Changchun and TU BerlinDirección de correo verificada de physik.tu-berlin.de
