Fabio Pellizzer
Fabio Pellizzer
Verified email at micron.com
Title
Cited by
Cited by
Year
Electronic switching in phase-change memories
A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, R Bez
IEEE Transactions on Electron Devices 51 (3), 452-459, 2004
6792004
Novel/spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
F Pellizzer, A Pirovano, F Ottogalli, M Magistretti, M Scaravaggi, P Zuliani, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18-19, 2004
5242004
Reliability study of phase-change nonvolatile memories
A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004
4722004
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
A Pirovano, AL Lacaita, F Pellizzer, SA Kostylev, A Benvenuti, R Bez
IEEE Transactions on Electron Devices 51 (5), 714-719, 2004
3882004
A bipolar-selected phase change memory featuring multi-level cell storage
F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, ...
IEEE Journal of Solid-State Circuits 44 (1), 217-227, 2008
3702008
Electronic switching effect and phase-change transition in chalcogenide materials
A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez
IEEE Electron Device Letters 25 (10), 684-686, 2004
3452004
Electrothermal and phase-change dynamics in chalcogenide-based memories
AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
3322004
Scaling analysis of phase-change memory technology
A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez
IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003
3002003
4-Mb MOSFET-selected phase-change memory experimental chip
F Bedeschi, R Bez, C Boffino, E Bonizzoni, E Buda, G Casagrande, ...
Proceedings of the 30th European Solid-State Circuits Conference, 207-210, 2004
2362004
Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
G Casagrande, R Bez, F Pellizzer
US Patent 6,972,430, 2005
2012005
An 8Mb demonstrator for high-density 1.8 V phase-change memories
F Bedeschi, C Resta, O Khouri, E Buda, L Costa, M Ferraro, F Pellizzer, ...
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004
1922004
A 90nm phase change memory technology for stand-alone non-volatile memory applications
F Pellizzer, A Benvenuti, B Gleixner, Y Kim, B Johnson, M Magistretti, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 122-123, 2006
1702006
A multi-level-cell bipolar-selected phase-change memory
F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, E Buda, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
1532008
4-Mb MOSFET-selected/spl mu/trench phase-change memory experimental chip
F Bedeschi, R Bez, C Boffino, E Bonizzoni, EC Buda, G Casagrande, ...
IEEE journal of solid-state circuits 40 (7), 1557-1565, 2005
1482005
Analysis of phase distribution in phase-change nonvolatile memories
D Ielmini, AL Lacaita, A Pirovano, F Pellizzer, R Bez
IEEE Electron Device Letters 25 (7), 507-509, 2004
1432004
Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
O Khouri, G Pollaccia, F Pellizzer
US Patent 7,122,824, 2006
1322006
Method for multilevel programming of phase change memory cells using a percolation algorithm
F Pellizzer, A Pirovano
US Patent 7,639,526, 2009
872009
Phase change memory with damascene memory element
IV Karpov, CC Kuo, Y Kim, F Pellizzer
US Patent 7,534,625, 2009
862009
Writing circuit for a phase change memory device
C Resta, F Bedeschi, F Pellizzer, G Casagrande
US Patent 7,075,841, 2006
842006
Etch bias homogenization
F Pellizzer, HA Castro, ET Flores
US Patent 8,785,314, 2014
832014
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