Pedro López
Pedro López
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TítuloCitado porAño
Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy
Journal of applied physics 97 (10), 103520, 2005
402005
Front-end process modeling in silicon
L Pelaz, LA Marqués, M Aboy, P López, I Santos
The European Physical Journal B 72 (3), 323, 2009
392009
Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects
LA Marqués, L Pelaz, P López, I Santos, M Aboy
Physical Review B 76 (15), 153201, 2007
262007
Modeling of defects, dopant diffusion and clustering in silicon
M Aboy, I Santos, L Pelaz, LA Marqués, P López
Journal of Computational Electronics 13 (1), 40-58, 2014
232014
Improved atomistic damage generation model for binary collision simulations
I Santos, LA Marqués, L Pelaz, P López
Journal of Applied Physics 105 (8), 083530, 2009
232009
Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
L Pelaz, R Duffy, M Aboy, L Marques, P Lopez, I Santos, BJ Pawlak, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
222008
Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
M Aboy, L Pelaz, P López, LA Marqués, R Duffy, VC Venezia
Applied physics letters 88 (19), 191917, 2006
222006
Atomistic analysis of the annealing behavior of amorphous regions in silicon
P López, L Pelaz, LA Marqués, I Santos
Journal of applied physics 101 (9), 093518, 2007
212007
Kinetics of large B clusters in crystalline and preamorphized silicon
M Aboy, L Pelaz, E Bruno, S Mirabella, S Boninelli
Journal of Applied Physics 110 (7), 073524, 2011
202011
Molecular dynamics simulation of the regrowth of nanometric multigate Si devices
LA Marqués, L Pelaz, I Santos, P López, R Duffy
Journal of Applied Physics 111 (3), 034302, 2012
182012
Molecular dynamics characterization of as-implanted damage in silicon
I Santos, LA Marqués, L Pelaz, P López, M Aboy, J Barbolla
Materials Science and Engineering: B 124, 372-375, 2005
172005
Molecular dynamics simulations of damage production by thermal spikes in Ge
P López, L Pelaz, I Santos, LA Marqués, M Aboy
Journal of Applied Physics 111 (3), 033519, 2012
162012
Role of silicon interstitials in boron cluster dissolution
M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy, VC Venezia, ...
Applied Physics Letters 86 (3), 031908, 2005
162005
Structural transformations from point to extended defects in silicon: A molecular dynamics study
LA Marqués, L Pelaz, I Santos, P López, M Aboy
Physical Review B 78 (19), 193201, 2008
152008
Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models
I Santos, LA Marqués, L Pelaz, P Lopez
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
152007
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
G Fisicaro, L Pelaz, M Aboy, P Lopez, M Italia, K Huet, F Cristiano, Z Essa, ...
Applied Physics Express 7 (2), 021301, 2014
142014
Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon
G Fisicaro, L Pelaz, P Lopez, A La Magna
Physical Review E 86 (3), 036705, 2012
142012
Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation
L Pelaz, LA Marqués, M Aboy, P López, J Barbolla
Computational materials science 33 (1-3), 92-105, 2005
132005
Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
LA Marqués, M Aboy, M Ruiz, I Santos, P López, L Pelaz
Materials Science in Semiconductor Processing 42, 235-238, 2016
122016
Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime
I Santos, LA Marques, L Pelaz, P Lopez
2007 Spanish Conference on Electron Devices, 37-40, 2007
112007
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Artículos 1–20