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Andrea Cester
Andrea Cester
Department of Information Engineering, Padova University
Correu electrònic verificat a dei.unipd.it - Pàgina d'inici
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Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
M Ceschia, A Paccagnella, A Cester, A Scarpa, G Ghidini
IEEE Transactions on Nuclear Science 45 (6), 2375-2382, 1998
1941998
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
G Meneghesso, M Meneghini, D Bisi, I Rossetto, A Cester, UK Mishra, ...
Semiconductor Science and Technology 28 (7), 074021, 2013
1122013
Flexible and Organic Neural Interfaces: A Review
N Lago, A Cester
Applied Sciences 7 (12), 1292, 2017
612017
High open‐circuit voltage Cs2AgBiBr6 carbon‐based perovskite solar cells via green processing of ultrasonic spray‐coated carbon electrodes from waste tire sources
F Schmitz, N Lago, L Fagiolari, J Burkhart, A Cester, A Polo, M Prato, ...
ChemSusChem, 2022
562022
Thermal stress effects on dye-sensitized solar cells (DSSCs)
D Bari, N Wrachien, R Tagliaferro, S Penna, TM Brown, A Reale, ...
Microelectronics Reliability 51 (9-11), 1762-1766, 2011
532011
Accelerated wear-out of ultra-thin gate oxides after irradiation
A Cester, S Cimino, A Paccagnella, G Ghibaudo, G Ghidini, J Wyss
IEEE Transactions on Nuclear Science 50 (3), 729-734, 2003
502003
Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides
A Cester, L Bandiera, M Ceschia, G Ghidini, A Paccagnella
IEEE Transactions on Nuclear Science 48 (6), 2093-2100, 2001
492001
Drain current decrease in MOSFETs after heavy ion irradiation
A Cester, S Gerardin, A Paccagnella, JR Schwank, G Vizkelethy, ...
IEEE transactions on nuclear science 51 (6), 3150-3157, 2004
482004
Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L
A Cester, S Cimino, A Paccagnella, G Ghidini, G Guegan
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
412003
Influence of shunt resistance on the performance of an illuminated string of solar cells: theory, simulation, and experimental analysis
M Barbato, M Meneghini, A Cester, G Mura, E Zanoni, G Meneghesso
IEEE Transactions on Device and Materials Reliability 14 (4), 942-950, 2014
392014
High-voltage double-pulsed measurement system for GaN-based power HEMTs
D Bisi, A Stocco, M Meneghini, F Rampazzo, A Cester, G Meneghesso, ...
2014 IEEE International Reliability Physics Symposium, CD. 11.1-CD. 11.4, 2014
352014
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED
A Cester, D Bari, J Framarin, N Wrachien, G Meneghesso, S Xia, ...
Microelectronics Reliability 50 (9-11), 1866-1870, 2010
352010
Worldwide outdoor round robin study of organic photovoltaic devices and modules
MV Madsen, SA Gevorgyan, R Pacios, J Ajuria, I Etxebarria, J Kettle, ...
Solar energy materials and solar cells 130, 281-290, 2014
332014
Worldwide Outdoor Round Robin Study of Organic Photovoltaic Devices and Modules
Solar Energy Materials and Solar Cells 130, 281-290, 2014
332014
Collapse of MOSFET drain current after soft breakdown
A Cester, A Paccagnella, G Ghidini, S Deleonibus, G Guegan
IEEE Transactions on Device and Materials Reliability 4 (1), 63-72, 2004
322004
A physical-based equivalent circuit model for an organic/electrolyte interface
N Lago, A Cester, N Wrachien, M Natali, SD Quiroga, S Bonetti, ...
Organic Electronics 35, 176-185, 2016
302016
Impact of 24-GeV proton irradiation on 0.13-μm CMOS devices
S Gerardin, A Gasperin, A Cester, A Paccagnella, G Ghidini, A Candelori, ...
2005 8th European Conference on Radiation and Its Effects on Components and …, 2005
302005
Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization
A Rizzo, F Lamberti, M Buonomo, N Wrachien, L Torto, N Lago, S Sansoni, ...
Solar Energy Materials and Solar Cells 189, 43-52, 2019
292019
Total ionizing dose effects on 4 Mbit phase change memory arrays
A Gasperin, N Wrachien, A Paccagnella, F Ottogalli, U Corda, P Fuochi, ...
IEEE Transactions on Nuclear Science 55 (4), 2090-2097, 2008
282008
Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides
M Ceschia, A Paccagnella, A Scarpa, A Cester, G Ghidini
Microelectronics Reliability 39 (2), 221-226, 1999
281999
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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