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S. Magalhães
S. Magalhães
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Radiation damage formation and annealing in GaN and ZnO
K Lorenz, M Peres, N Franco, JG Marques, SMC Miranda, S Magalhães, ...
Oxide-Based Materials and Devices Ii 7940, 135-148, 2011
732011
Magnetism in ar-implanted ZnO
RP Borges, RC Da Silva, S Magalhaes, MM Cruz, M Godinho
Journal of Physics: Condensed Matter 19 (47), 476207, 2007
522007
Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11− 22) InGaN layers
A Das, S Magalhaes, Y Kotsar, PK Kandaswamy, B Gayral, K Lorenz, ...
Applied Physics Letters 96 (18), 2010
382010
Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds
DN Faye, E Wendler, M Felizardo, S Magalhães, E Alves, F Brunner, ...
The Journal of Physical Chemistry C 120 (13), 7277-7283, 2016
352016
Photoelectrochemical water splitting: Thermal annealing challenges on hematite nanowires
P Quiterio, A Apolinario, D Navas, S Magalhaes, E Alves, A Mendes, ...
The Journal of Physical Chemistry C 124 (24), 12897-12911, 2020
302020
Determination of the 9Be (3He, pi) 11B (i= 0, 1, 2, 3) cross section at 135° in the energy range 1–2.5 MeV
NP Barradas, N Catarino, R Mateus, S Magalhães, E Alves, Z Siketić, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015
282015
Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0. 15Ga0. 85N
S Magalhães, M Fialho, M Peres, K Lorenz, E Alves
Journal of Physics D: Applied Physics 49 (13), 135308, 2016
222016
Engineering strain and conductivity of MoO3 by ion implantation
DR Pereira, C Díaz-Guerra, M Peres, S Magalhaes, JG Correia, ...
Acta Materialia 169, 15-27, 2019
212019
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
DN Faye, M Fialho, S Magalhães, E Alves, NB Sedrine, J Rodrigues, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016
202016
Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation
S Magalhães, M Peres, V Fellmann, B Daudin, AJ Neves, E Alves, ...
Journal of Applied Physics 108 (8), 2010
182010
Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1− xN (0⩽ x⩽ 1) alloys
M Peres, S Magalhães, N Franco, MJ Soares, AJ Neves, E Alves, ...
Microelectronics journal 40 (2), 377-380, 2009
182009
RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO
P Jozwik, S Magalhaes, R Ratajczak, C Mieszczynski, M Sequeira, ...
physica status solidi (b) 256 (5), 1800364, 2019
172019
Measuring strain caused by ion implantation in GaN
P Mendes, K Lorenz, E Alves, S Schwaiger, F Scholz, S Magalhaes
Materials Science in Semiconductor Processing 98, 95-99, 2019
162019
Validity of Vegard’s rule for Al1− xInxN (0.08< x< 0.28) thin films grown on GaN templates
S Magalhães, N Franco, IM Watson, RW Martin, KP O’Donnell, ...
Journal of Physics D: Applied Physics 50 (20), 205107, 2017
162017
Disorder induced violet/blue luminescence in rf‐deposited ZnO films
M Peres, S Magalhães, MR Soares, MJ Soares, L Rino, E Alves, K Lorenz, ...
physica status solidi c 10 (4), 662-666, 2013
152013
Al1−xInxN/GaN bilayers: Structure, morphology, and optical properties
K Lorenz, S Magalhaes, N Franco, NP Barradas, V Darakchieva, E Alves, ...
physica status solidi (b) 247 (7), 1740-1746, 2010
152010
Effect of AlN content on the lattice site location of terbium ions in AlxGa1− xN compounds
M Fialho, J Rodrigues, S Magalhães, MR Correia, T Monteiro, K Lorenz, ...
Semiconductor Science and Technology 31 (3), 035026, 2016
142016
Molybdenum oxide thin films grown on flexible ITO-coated PET substrates
A Marciel, M Graça, A Bastos, L Pereira, J Suresh Kumar, J Borges, F Vaz, ...
Materials 14 (4), 821, 2021
132021
Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium
M Fialho, S Magalhães, MP Chauvat, P Ruterana, K Lorenz, E Alves
Journal of Applied Physics 120 (16), 2016
122016
Radiation hardness of GeSi heterostructures with thin Ge layers
JP Leitao, NM Santos, NA Sobolev, MR Correia, NP Stepina, MC Carmo, ...
Materials Science and Engineering: B 147 (2-3), 191-194, 2008
122008
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