Eric Feltin
Eric Feltin
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Room-temperature polariton lasing in semiconductor microcavities
S Christopoulos, GBH Von Högersthal, AJD Grundy, PG Lagoudakis, ...
Physical review letters 98 (12), 126405, 2007
High electron mobility lattice-matched field-effect transistor heterostructures
M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean
Applied physics letters 89 (6), 062106, 2006
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ...
Journal of Physics D: Applied Physics 40 (20), 6328, 2007
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
E Feltin, B Beaumont, M Laügt, P De Mierry, P Vennégučs, H Lahreche, ...
Applied Physics Letters 79 (20), 3230-3232, 2001
Room temperature polariton lasing in a multiple quantum well microcavity
G Christmann, R Butté, E Feltin, JF Carlin, N Grandjean
Applied Physics Letters 93 (5), 051102, 2008
Spontaneous polarization buildup in a room-temperature polariton laser
JJ Baumberg, AV Kavokin, S Christopoulos, AJD Grundy, R Butté, ...
Physical Review Letters 101 (13), 136409, 2008
Two-dimensional electron gas density in heterostructures
M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean, V Darakchieva, ...
Journal of Applied Physics 103 (9), 093714, 2008
205-GHz (Al, In) N/GaN HEMTs
H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ...
IEEE Electron Device Letters 31 (9), 957-959, 2010
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ...
2006 International Electron Devices Meeting, 1-4, 2006
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
JF Carlin, C Zellweger, J Dorsaz, S Nicolay, G Christmann, E Feltin, ...
physica status solidi (b) 242 (11), 2326-2344, 2005
Barrier-layer scaling of InAlN/GaN HEMTs
F Medjdoub, M Alomari, JF Carlin, M Gonschorek, E Feltin, MA Py, ...
IEEE Electron device letters 29 (5), 422-425, 2008
Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
P Vennégučs, M Benaissa, B Beaumont, E Feltin, P De Mierry, ...
Applied Physics Letters 77 (6), 880-882, 2000
Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕ GaN Bragg mirrors
JF Carlin, J Dorsaz, E Feltin, R Butté, N Grandjean, M Ilegems, M Laügt
Applied Physics Letters 86 (3), 031107, 2005
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
J Kuzmik, G Pozzovivo, C Ostermaier, G Strasser, D Pogany, E Gornik, ...
Journal of Applied Physics 106 (12), 124503, 2009
Room-temperature polariton luminescence from a bulk GaN microcavity
R Butté, G Christmann, E Feltin, JF Carlin, M Mosca, M Ilegems, ...
Physical Review B 73 (3), 033315, 2006
Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr $\hbox {O} _ {\bm 2} $ or Hf $\hbox {O} _ {\bm 2} $
J Kuzmik, G Pozzovivo, S Abermann, JF Carlin, M Gonschorek, E Feltin, ...
IEEE transactions on electron devices 55 (3), 937-941, 2008
Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory
J Levrat, R Butté, E Feltin, JF Carlin, N Grandjean, D Solnyshkov, ...
Physical Review B 81 (12), 125305, 2010
Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime
G Christmann, R Butté, E Feltin, A Mouti, PA Stadelmann, A Castiglia, ...
Physical Review B 77 (8), 085310, 2008
Midinfrared intersubband absorption in lattice-matched multiple quantum wells
S Nicolay, JF Carlin, E Feltin, R Butté, M Mosca, N Grandjean, M Ilegems, ...
Applied Physics Letters 87 (11), 111106, 2005
Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
JM Bethoux, P Vennégučs, F Natali, E Feltin, O Tottereau, G Nataf, ...
Journal of applied physics 94 (10), 6499-6507, 2003
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