Honggyu Kim
Honggyu Kim
Assistant Professor, University of Florida
Verified email at ufl.edu
Title
Cited by
Cited by
Year
High-mobility BaSnO3 grown by oxide molecular beam epitaxy
S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer
APL Materials 4 (1), 016106, 2016
1292016
Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal
T Schumann, L Galletti, DA Kealhofer, H Kim, M Goyal, S Stemmer
Physical Review Letters 120 (1), 016801, 2018
752018
Electrochemically tunable thermal conductivity of lithium cobalt oxide
J Cho, MD Losego, HG Zhang, H Kim, J Zuo, I Petrov, DG Cahill, ...
Nature communications 5 (1), 1-6, 2014
732014
Lattice and strain analysis of atomic resolution Z-contrast images based on template matching
JM Zuo, AB Shah, H Kim, Y Meng, W Gao, JL Rouviére
Ultramicroscopy 136, 50-60, 2014
672014
Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study
H Kim, Y Meng, JL Rouviére, D Isheim, DN Seidman, JM Zuo
Journal of Applied Physics 113 (10), 103511, 2013
422013
Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric
S Bang, S Lee, S Jeon, S Kwon, W Jeong, H Kim, I Shin, HJ Chang, ...
Semiconductor Science and Technology 24 (2), 025008, 2008
372008
Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy
T Schumann, S Raghavan, K Ahadi, H Kim, S Stemmer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (5 …, 2016
362016
Direct Observation of Sr Vacancies in by Quantitative Scanning Transmission Electron Microscopy
H Kim, JY Zhang, S Raghavan, S Stemmer
Physical Review X 6 (4), 041063, 2016
322016
Molecular beam epitaxy of Cd3As2 on a III-V substrate
T Schumann, M Goyal, H Kim, S Stemmer
APL Materials 4 (12), 126110, 2016
282016
Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films
JY Zhang, H Kim, E Mikheev, AJ Hauser, S Stemmer
Scientific reports 6, 23652, 2016
252016
Pt nanocrystals embedded in remote plasma atomic-layer-deposited HfO2 for nonvolatile memory devices
H Kim, S Woo, H Kim, S Bang, Y Kim, D Choi, H Jeon
Electrochemical and Solid State Letters 12 (4), H92, 2009
212009
Two-dimensional Dirac fermions in thin films of
L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ...
Physical Review B 97 (11), 115132, 2018
192018
The effects of annealing ambient on the characteristics of La2O3 films deposited by RPALD
H Kim, S Woo, J Lee, H Kim, Y Kim, H Lee, H Jeon
Journal of The Electrochemical Society 157 (4), H479, 2010
142010
Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices
Y Meng, H Kim, JL Rouviére, D Isheim, DN Seidman, JM Zuo
Journal of Applied Physics 116 (1), 013513, 2014
132014
Growth of strontium ruthenate films by hybrid molecular beam epitaxy
PB Marshall, H Kim, K Ahadi, S Stemmer
APL Materials 5 (9), 096101, 2017
122017
Surface states of strained thin films of the Dirac semimetal
M Goyal, H Kim, T Schumann, L Galletti, AA Burkov, S Stemmer
Physical Review Materials 3 (6), 064204, 2019
102019
Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice
H Kim, Y Meng, JL Rouviére, JM Zuo
Micron 92, 6-12, 2017
102017
Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
Y Kim, S Woo, H Kim, J Lee, H Kim, H Lee, H Jeon
Journal of Materials Research 25 (10), 1898-1903, 2010
102010
Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface
K Ahadi, H Kim, S Stemmer
APL Materials 6 (5), 056102, 2018
92018
Mid-infrared emission from In (Ga) Sb layers on InAs (Sb)
R Liu, Y Zhong, L Yu, H Kim, S Law, JM Zuo, D Wasserman
Optics express 22 (20), 24466-24477, 2014
92014
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