Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ...
Applied Surface Science 515, 146033, 2020
132 2020 Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions M Bosi, P Mazzolini, L Seravalli, R Fornari
Journal of Materials Chemistry C 8 (32), 10975-10992, 2020
131 2020 Quantum dot nanostructures and molecular beam epitaxy S Franchi, G Trevisi, L Seravalli, P Frigeri
Progress in Crystal Growth and Characterization of Materials 47 (2-3), 166-195, 2003
131 2003 The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures L Seravalli, M Minelli, P Frigeri, P Allegri, V Avanzini, S Franchi
Applied physics letters 82 (14), 2341-2343, 2003
111 2003 Quantum dot strain engineering of< equation>< font face='verdana'> In</font>< font face='verdana'> As</font>/< font face='verdana'> In</font>< font face='verdana'> Ga</font … L Seravalli, M Minelli, P Frigeri, S Franchi, G Guizzetti, M Patrini, ...
Journal of applied physics 101 (2), 024313-024313-8, 2007
90 * 2007 Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates L Seravalli, G Trevisi, P Frigeri, D Rivas, G Munoz-Matutano, I Suarez, ...
Applied physics letters 98 (17), 2011
69 2011 Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 μm L Seravalli, P Frigeri, M Minelli, P Allegri, V Avanzini, S Franchi
Applied Physics Letters 87 (6), 2005
69 2005 1.59 μm room temperature emission from metamorphic InAs∕ InGaAs quantum dots grown on GaAs substrates L Seravalli, P Frigeri, G Trevisi, S Franchi
Applied Physics Letters 92 (21), 2008
62 2008 Carrier thermodynamics in S Sanguinetti, D Colombo, M Guzzi, E Grilli, M Gurioli, L Seravalli, ...
Physical Review B—Condensed Matter and Materials Physics 74 (20), 205302, 2006
59 2006 Molecular beam epitaxy: an overview P Frigeri, L Seravalli, G Trevisi, S Franchi
Elsevier, 2016
54 2016 Defect passivation in strain engineered InAs/(InGa) As quantum dots S Mazzucato, D Nardin, M Capizzi, A Polimeni, A Frova, L Seravalli, ...
Materials Science and Engineering: C 25 (5-8), 830-834, 2005
51 2005 A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes L Seravalli, M Bosi
Materials 14 (24), 7590, 2021
48 2021 The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures L Seravalli, G Trevisi, P Frigeri, S Franchi, M Geddo, G Guizzetti
Nanotechnology 20 (27), 275703, 2009
48 2009 Effects of the quantum dot ripening in high-coverage InAs∕ GaAs nanostructures P Frigeri, L Nasi, M Prezioso, L Seravalli, G Trevisi, E Gombia, R Mosca, ...
Journal of Applied Physics 102 (8), 2007
48 2007 Full Dynamic Control of In-plane Elastic Stress Tensor in Nanomembranes J Martín-Sánchez, R Trotta, G Piredda, C Schimpf, G Trevisi, L Seravalli, ...
arXiv preprint arXiv:1511.08192, 2015
46 2015 Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and … I Irfan, S Golovynskyi, M Bosi, L Seravalli, OA Yeshchenko, B Xue, ...
The Journal of Physical Chemistry C 125 (7), 4119-4132, 2021
44 2021 Metamorphic quantum dots: quite different nanostructures L Seravalli, P Frigeri, L Nasi, G Trevisi, C Bocchi
Journal of Applied Physics 108 (6), 2010
43 2010 Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping J Gomis-Bresco, G Muñoz-Matutano, J Martínez-Pastor, B Alén, ...
New Journal of physics 13 (2), 023022, 2011
42 2011 Residual strain measurements in InGaAs metamorphic buffer layers on GaAs V Bellani, C Bocchi, T Ciabattoni, S Franchi, P Frigeri, P Galinetto, ...
The European Physical Journal B 56, 217-222, 2007
41 2007 Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: effects of InGaAs capping L Seravalli, C Bocchi, G Trevisi, P Frigeri
Journal of Applied Physics 108 (11), 2010
39 2010 
Sergii GolovynskyiCollege of Optoelectronic Engineering, Shenzhen UniversityDirección de correo verificada de szu.edu.cn
