| High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide E Guerriero, P Pedrinazzi, A Mansouri, O Habibpour, M Winters, ... Scientific reports 7 (1), 2419, 2017 | 50 | 2017 |
| Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC RY Khosa, EB Thorsteinsson, M Winters, N Rorsman, R Karhu, J Hassan, ... Aip Advances 8 (2), 2018 | 49 | 2018 |
| Graphene self-switching diodes as zero-bias microwave detectors A Westlund, M Winters, IG Ivanov, J Hassan, PÅ Nilsson, E Janzén, ... Applied Physics Letters 106 (9), 2015 | 43 | 2015 |
| A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC M Winters, J Hassan, H Zirath, E Janzén, N Rorsman Journal of Applied Physics 113 (19), 2013 | 28 | 2013 |
| Tuning epitaxial graphene sensitivity to water by hydrogen intercalation C Melios, M Winters, W Strupiński, V Panchal, CE Giusca, ... Nanoscale 9 (10), 3440-3448, 2017 | 25 | 2017 |
| Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC (0 0 0 1) layers J Hassan, M Winters, IG Ivanov, O Habibpour, H Zirath, N Rorsman, ... Carbon 82, 12-23, 2015 | 23 | 2015 |
| High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes M Winters, M Thorsell, W Strupiński, N Rorsman Applied Physics Letters 107 (14), 2015 | 21 | 2015 |
| Hysteresis modeling in graphene field effect transistors M Winters, EÖ Sveinbjörnsson, N Rorsman Journal of Applied Physics 117 (7), 2015 | 14 | 2015 |
| Electrical characterization of high k-dielectrics for 4H-SiC MIS devices RY Khosa, JT Chen, M Winters, K Pálsson, R Karhu, J Hassan, ... Materials Science in Semiconductor Processing 98, 55-58, 2019 | 9 | 2019 |
| High gain graphene field effect transistors for wideband amplifiers O Habibpour, M Winters, N Rorsman, H Zirath 2014 44th European Microwave Conference, 371-373, 2014 | 9 | 2014 |
| Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al RY Khosa, EÖ Sveinbjörnsson, M Winters, J Hassan, R Karhu, E Janzén, ... Materials Science Forum 897, 135-138, 2017 | 8 | 2017 |
| Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies M Winters, O Habibpour, IG Ivanov, J Hassan, E Janzén, H Zirath, ... Carbon 81, 96-104, 2015 | 8 | 2015 |
| Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC M Winters, EÖ Sveinbjörnsson, C Melios, O Kazakova, W Strupiński, ... AIP Advances 6 (8), 2016 | 7 | 2016 |
| Electron transport studies in epitaxial graphene on SiC M Winters PQDT-Global, 2013 | 3 | 2013 |
| A dc comparison study between h-intercalated and native epi-graphenes on sic substrates M Winters, M Thorsell, J ul Hassan, N Rorsman, E Janzén, H Zirath Materials Science Forum 740, 129-132, 2013 | 2 | 2013 |
| Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC M Winters, EB Thorsteinsson, EÖ Sveinbjörnsson, HP Gislason, J Hassan, ... Materials Science Forum 778, 1146-1149, 2014 | 1 | 2014 |
| Electron Transport and Charge Control in Epitaxial Graphene M Winters PQDT-Global, 2016 | | 2016 |
| Publisher's Note:“Graphene self-switching diodes as zero-bias microwave detectors”[Appl. Phys. Lett. 106, 093116 (2015)] A Westlund, M Winters, IG Ivanov, J Hassan, PÅ Nilsson, E Janzén, ... Applied Physics Letters 106 (15), 2015 | | 2015 |
