Mario Laudato
Mario Laudato
Intermolecular Inc.
Verified email at intermolecular.com
Title
Cited by
Cited by
Year
Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses
S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ...
Frontiers in neuroscience 10, 56, 2016
1642016
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ...
Nature communications 10 (1), 1-9, 2019
1112019
Bipolar switching in chalcogenide phase change memory
N Ciocchini, M Laudato, M Boniardi, E Varesi, P Fantini, AL Lacaita, ...
Scientific reports 6 (1), 1-9, 2016
542016
Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part II: Select devices
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
IEEE Transactions on Electron Devices 65 (1), 122-128, 2017
492017
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016
492016
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
E Ambrosi, A Bricalli, M Laudato, D Ielmini
Faraday discussions 213, 87-98, 2019
472019
Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—part I: memory devices
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
IEEE Transactions on Electron Devices 65 (1), 115-121, 2018
402018
Volatile resistive switching memory based on Ag ion drift/diffusion Part I: Numerical modeling
W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini
IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019
212019
Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling
W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini
IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019
192019
Impact of thermoelectric effects on phase change memory characteristics
N Ciocchini, M Laudato, A Leone, P Fantini, AL Lacaita, D Ielmini
IEEE Transactions on Electron Devices 62 (10), 3264-3271, 2015
152015
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing
W Wang, A Bricalli, M Laudato, E Ambrosi, E Covi, D Ielmini
2018 IEEE International Electron Devices Meeting (IEDM), 40.3. 1-40.3. 4, 2018
142018
Composition-controlled atomic layer deposition of phase-change memories and ovonic threshold switches with high performance
V Adinolfi, L Cheng, M Laudato, RC Clarke, VK Narasimhan, S Balatti, ...
ACS nano 13 (9), 10440-10447, 2019
132019
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks
V Milo, G Pedretti, M Laudato, A Bricalli, E Ambrosi, S Bianchi, E Chicca, ...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
92018
Atomic layer deposition of germanium-selenium-tellurium compounds for low-leakage, tunable ovonic threshold switches
V Adinolfi, M Laudato, R Clarke, VK Narasimhan, L Cheng, K Littau
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38 (5 …, 2020
42020
ALD GeAsSeTe ovonic threshold switch for 3D stackable crosspoint memory
M Laudato, V Adinolfi, R Clarke, M McBriarty, S Jewhurst, K Littau
2020 IEEE International Memory Workshop (IMW), 1-4, 2020
42020
ALD Heterojunction Ovonic Threshold Switches
V Adinolfi, M Laudato, R Clarke, S Jewhurst, ME McBriarty, S Hoang, ...
ACS Applied Electronic Materials 2 (12), 3818-3824, 2020
12020
Universal thermoelectric characteristic in phase change memories
N Ciocchini, M Laudato, A Leone, P Fantini, AL Lacaita, D Ielmini
2015 IEEE International Memory Workshop (IMW), 1-4, 2015
12015
ALD of Phase Change and Threshold Switching Materials for Next-Generation Nonvolatile Memory Devices
V Adinolfi, R Clarke, M Laudato, S Jewhurst, M McBriarty, S Hoang, ...
ECS Meeting Abstracts, 1684, 2020
2020
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage
N Polino, M Laudato, E Ambrosi, A Bricalli, D Ielmini
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
2019
Study of novel devices for crosspoint memory and neuromorphic applications
M LAUDATO
Italy, 2018
2018
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Articles 1–20