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Stefan Mönch
Stefan Mönch
Otros nombresStefan Moench
Fraunhofer IAF
Dirección de correo verificada de ieee.org
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Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology
R Reiner, P Waltereit, B Weiss, S Moench, M Wespel, S Müller, R Quay, ...
IET Power Electronics 11 (4), 681-688, 2018
522018
Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
S Moench, M Costa, A Barner, I Kallfass, R Reiner, B Weiss, P Waltereit, ...
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
372015
PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors
S Moench, R Reiner, P Waltereit, F Benkhelifa, J Hückelheim, D Meder, ...
IEEE Transactions on Power Electronics 36 (1), 83-86, 2020
272020
Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
M Basler, R Reiner, S Moench, P Waltereit, R Quay, I Kallfass, ...
IEEE Electron Device Letters 41 (7), 993-996, 2020
272020
Substrate potential of high-voltage GaN-on-Si HEMTs and half-bridges: Static and dynamic four-terminal characterization and modeling
S Moench, C Salcines, R Li, Y Li, I Kallfass
2017 IEEE 18th Workshop on Control and Modeling for Power Electronics …, 2017
262017
Building blocks for GaN power integration
M Basler, R Reiner, S Moench, F Benkhelifa, P Döring, P Waltereit, ...
IEEE Access 9, 163122-163137, 2021
232021
Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer
S Moench, S Müller, R Reiner, P Waltereit, H Czap, M Basler, ...
physica status solidi (a) 218 (3), 2000404, 2021
222021
Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
S Moench, R Reiner, B Weiss, P Waltereit, R Quay, O Ambacher, ...
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
212017
A 600v gan-on-si power ic with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
S Moench, R Reiner, P Waltereit, J Hueckelheim, D Meder, R Quay, ...
CIPS 2020; 11th International Conference on Integrated Power Electronics …, 2020
182020
Integrated current sensing in GaN power ICs
S Moench, R Reiner, P Waltereit, R Quay, O Ambacher, I Kallfass
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
182019
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
S Moench, I Kallfass, R Reiner, B Weiss, P Waltereit, R Quay, ...
2016 IEEE 4th workshop on wide bandgap power devices and applications (WiPDA …, 2016
172016
Thin-film-based SAW magnetic field sensors
JM Meyer, V Schell, J Su, S Fichtner, E Yarar, F Niekiel, T Giese, ...
Sensors 21 (24), 8166, 2021
162021
A 600V p-GaN gate HEMT with intrinsic freewheeling Schottky-diode in a GaN power IC with bootstrapped driver and sensors
S Moench, R Reiner, P Waltereit, S Müller, R Quay, O Ambacher, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
152020
Pulsed measurement of sub-nanosecond 1000 V/ns switching 600 V GaN HEMTs using 1.5 GHz low-impedance voltage probe and 50 Ohm scope
S Moench, P Hillenbrand, P Hengel, I Kallfass
2017 IEEE 5th workshop on wide bandgap power devices and applications (WiPDA …, 2017
152017
Sensitivity analysis of behavioral MOSFET models in transient EMC simulation
P Hillenbrand, M Beltle, S Tenbohlen, S Mönch
2017 International Symposium on Electromagnetic Compatibility-EMC EUROPE, 1-6, 2017
142017
Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications
R Reiner, F Benkhelifa, S Moench, M Basler, P Waltereit, M Mikulla, ...
PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021
122021
Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges
S Moench, R Reiner, P Waltereit, D Meder, M Basler, R Quay, ...
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019
122019
Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
S Mönch, M Costa, A Barner, I Kallfass, R Reiner, B Weiss, P Waltereit, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
122015
A GaN-based current sense amplifier for GaN HEMTs with integrated current shunts
M Basler, S Moench, R Reiner, P Waltereit, R Quay, I Kallfass, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
112020
Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
R Reiner, P Waltereit, S Moench, M Dammann, B Weiss, R Quay, ...
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018
102018
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