Connor J. McClellan
Connor J. McClellan
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2
CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee
Acs Nano 9 (1), 363-370, 2015
1592015
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano letters 17 (6), 3429-3433, 2017
1402017
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, OB Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
922017
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
L Cai, CJ McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng
Nano letters 17 (6), 3854-3861, 2017
692017
An electrochemical thermal transistor
A Sood, F Xiong, S Chen, H Wang, D Selli, J Zhang, CJ McClellan, J Sun, ...
Nature communications 9 (1), 1-9, 2018
572018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
S Vaziri, E Yalon, MM Rojo, SV Suryavanshi, H Zhang, CJ McClellan, ...
Science advances 5 (8), eaax1325, 2019
442019
Unipolar n-type black phosphorus transistors with low work function contacts
CH Wang, JAC Incorvia, CJ McClellan, AC Yu, MJ Mleczko, E Pop, ...
Nano letters 18 (5), 2822-2827, 2018
382018
Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements
IM Datye, AJ Gabourie, CD English, KKH Smithe, CJ McClellan, NC Wang, ...
2D Materials 6 (1), 011004, 2018
312018
Effective n-type doping of monolayer MoS2by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
302017
Fast Spiking of a Mott VO2–Carbon Nanotube Composite Device
SM Bohaichuk, S Kumar, G Pitner, CJ McClellan, J Jeong, MG Samant, ...
Nano letters 19 (10), 6751-6755, 2019
222019
Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms
CM Corbet, C McClellan, K Kim, S Sonde, E Tutuc, SK Banerjee
ACS nano 8 (10), 10480-10485, 2014
182014
Uncovering the Effects of Metal Contacts on Monolayer MoS2
K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ...
ACS nano 14 (11), 14798-14808, 2020
142020
3D Monolithic Stacked 1T1R cells using Monolayer MoS2 FET and hBN RRAM Fabricated at Low (150°C) Temperature
CH Wang, C McClellan, Y Shi, X Zheng, V Chen, M Lanza, E Pop, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2018
142018
Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors
E Barré, JAC Incorvia, SH Kim, CJ McClellan, E Pop, HSP Wong, ...
Nano letters 19 (2), 770-774, 2019
122019
High Current Density in Monolayer MoS2 Doped by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
ACS nano 15 (1), 1587-1596, 2021
92021
R.(Lily) Xu, SV Suryavanshi, AJ Gabourie, CM Neumann, F. Xiong, AB Farimani, E. Pop
E Yalon, CJ McClellan, KKH Smithe, MM Rojo
Nano Lett 17, 3429, 2017
82017
Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors
A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee
Applied Physics Letters 104 (8), 083106, 2014
82014
Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube
SM Bohaichuk, M Muñoz Rojo, G Pitner, CJ McClellan, F Lian, J Li, ...
ACS nano 13 (10), 11070-11077, 2019
62019
Vertical Sidewall MoS2 Growth and Transistors
CJ McClellan, CY Andrew, CH Wang, HSP Wong, E Pop
2019 Device Research Conference (DRC), 65-66, 2019
22019
Direct observation of power dissipation in monolayer MoS2 devices
E Yalon, CJ Mcclellan, KKH Smithe, YC Shin, R Xu, E Pop
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
22016
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Articles 1–20