A two-qubit gate between phosphorus donor electrons in silicon Y He, SK Gorman, D Keith, L Kranz, JG Keizer, MY Simmons
Nature 571 (7765), 371-375, 2019
328 2019 Engineering topological states in atom-based semiconductor quantum dots M Kiczynski, S Gorman, H Geng, M Donnely, Y Chung, Y He, J Keizer, ...
Nature 606, 694-699, 2022
99 2022 Two-electron spin correlations in precision placed donors in silicon MA Broome, SK Gorman, MG House, SJ Hile, JG Keizer, D Keith, CD Hill, ...
Nature communications 9 (1), 980, 2018
89 2018 Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy JG Keizer, J Bocquel, PM Koenraad, T Mano, T Noda, K Sakoda
Applied Physics Letters 96 (6), 2010
79 2010 Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor M Koch, JG Keizer, P Pakkiam, D Keith, MG House, E Peretz, ...
Nature nanotechnology 14 (2), 137-140, 2019
74 2019 Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea N Kleemans, J Van Bree, AO Govorov, JG Keizer, GJ Hamhuis, R Nötzel, ...
Nature Physics 6 (7), 534-538, 2010
70 2010 Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy AD Giddings, JG Keizer, M Hara, GJ Hamhuis, H Yuasa, H Fukuzawa, ...
Physical Review B 83 (20), 205308, 2011
61 2011 Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon L Kranz, SK Gorman, B Thorgrimsson, Y He, D Keith, JG Keizer, ...
Advanced Materials 32 (40), 2003361, 2020
58 2020 A comparison of the physical properties of four new generation flexible ureteroscopes:(de) flection, flow properties, torsion stiffness, and optical characteristics MLJE Paffen, JG Keizer, G Winter, AJ Arends, AJM Hendrikx
Journal of endourology 22 (10), 2227-2234, 2008
57 2008 High-fidelity single-shot singlet-triplet readout of precision-placed donors in silicon MA Broome, TF Watson, D Keith, SK Gorman, MG House, JG Keizer, ...
Physical review letters 119 (4), 046802, 2017
56 2017 Observation and explanation of strong electrically tunable exciton factors in composition engineered In(Ga)As quantum dots V Jovanov, T Eissfeller, S Kapfinger, EC Clark, F Klotz, M Bichler, ...
Physical Review B 83 (16), 161303, 2011
49 2011 Suppressing segregation in highly phosphorus doped silicon monolayers JG Keizer, S Koelling, PM Koenraad, MY Simmons
ACS nano 9 (12), 12537-12541, 2015
44 2015 Addressable electron spin resonance using donors and donor molecules in silicon SJ Hile, L Fricke, MG House, E Peretz, CY Chen, Y Wang, M Broome, ...
Science advances 4 (7), eaaq1459, 2018
43 2018 Benchmarking high fidelity single-shot readout of semiconductor qubits D Keith, SK Gorman, L Kranz, Y He, JG Keizer, MA Broome, MY Simmons
New Journal of Physics 21 (6), 063011, 2019
39 2019 Coherent control of a donor-molecule electron spin qubit in silicon L Fricke, SJ Hile, L Kranz, Y Chung, Y He, P Pakkiam, MG House, ...
Nature communications 12 (1), 3323, 2021
38 2021 Low resistivity, super-saturation phosphorus-in-silicon monolayer doping SR McKibbin, CM Polley, G Scappucci, JG Keizer, MY Simmons
Applied Physics Letters 104 (12), 2014
38 2014 Precise shape engineering of epitaxial quantum dots by growth kinetics S Bietti, J Bocquel, S Adorno, T Mano, JG Keizer, PM Koenraad, ...
Physical Review B 92 (7), 075425, 2015
37 2015 InAs quantum dot morphology after capping with In, N, Sb alloyed thin films JG Keizer, JM Ulloa, AD Utrilla, PM Koenraad
Applied Physics Letters 104 (5), 2014
34 2014 Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms V Jovanov, T Eissfeller, S Kapfinger, EC Clark, F Klotz, M Bichler, ...
Physical Review B 85 (16), 165433, 2012
33 2012 Single-charge detection by an atomic precision tunnel junction MG House, E Peretz, JG Keizer, SJ Hile, MY Simmons
Applied Physics Letters 104 (11), 2014
27 2014