Deep level defects in electron-irradiated SiC epitaxial layers C Hemmingsson, NT Son, O Kordina, JP Bergman, E Janzén, ...
Journal of Applied Physics 81 (9), 6155-6159, 1997
359 1997 Negative-U centers in 4H silicon carbide CG Hemmingsson, NT Son, A Ellison, J Zhang, E Janzén
Physical Review B 58 (16), R10119, 1998
181 1998 Evidence for two Mg related acceptors in GaN BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ...
Physical review letters 102 (23), 235501, 2009
149 2009 Growth of thick GaN layers with hydride vapour phase epitaxy B Monemar, H Larsson, C Hemmingsson, IG Ivanov, D Gogova
Journal of crystal growth 281 (1), 17-31, 2005
93 2005 Capture cross sections of electron irradiation induced defects in 6H–SiC C Hemmingsson, NT Son, O Kordina, E Janzén, JL Lindström
Journal of applied physics 84 (2), 704-708, 1998
78 1998 HTCVD growth of semi-insulating 4H-SiC crystals with low defect density A Ellison, B Magnusson, C Hemmingsson, W Magnusson, T Iakimov, ...
MRS Online Proceedings Library (OPL) 640, H1. 2, 2000
74 2000 Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D Gogova, A Kasic, H Larsson, C Hemmingsson, B Monemar, F Tuomisto, ...
Journal of applied physics 96 (1), 799-806, 2004
66 2004 Properties of the main Mg-related acceptors in GaN from optical and structural studies B Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ...
Journal of Applied Physics 115 (5), 2014
58 2014 Emission properties of Ga2 O3 nano-flakes: effect of excitation density G Pozina, M Forsberg, MA Kaliteevski, C Hemmingsson
Scientific Reports 7 (1), 42132, 2017
57 2017 Identification of the gallium vacancy–oxygen pair defect in GaN NT Son, CG Hemmingsson, T Paskova, KR Evans, A Usui, N Morishita, ...
Physical Review B 80 (15), 153202, 2009
54 2009 Observation of negative-U centers in 6H silicon carbide CG Hemmingsson, NT Son, E Janzén
Applied physics letters 74 (6), 839-841, 1999
54 1999 Barrier height determination for n-type 4H-SiC schottky contacts made using various metals R Yakimova, C Hemmingsson, MF Macmillan, T Yakimov, E Janzén
Journal of electronic materials 27, 871-875, 1998
52 1998 Effect of silicon and oxygen doping on donor bound excitons in bulk GaN G Pozina, S Khromov, C Hemmingsson, L Hultman, B Monemar
Physical Review B 84 (16), 165213, 2011
46 2011 Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN C Hemmingsson, G Pozina
Journal of crystal growth 366, 61-66, 2013
44 2013 Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor C Hemmingsson, PP Paskov, G Pozina, M Heuken, B Schineller, ...
Journal of crystal growth 300 (1), 32-36, 2007
44 2007 Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy TT Duc, G Pozina, E Janzén, C Hemmingsson
Journal of Applied Physics 114 (15), 2013
43 2013 Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN S Khromov, CG Hemmingsson, H Amano, B Monemar, L Hultman, ...
Physical Review B 84 (7), 075324, 2011
43 2011 Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates G Pozina, PP Paskov, JP Bergman, C Hemmingsson, L Hultman, ...
Applied Physics Letters 91 (22), 2007
43 2007 Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC A Henry, O Kordina, C Hallin, C Hemmingsson, E Janzén
Applied physics letters 65 (19), 2457-2459, 1994
41 1994 Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor C Hemmingsson, PP Paskov, G Pozina, M Heuken, B Schineller, ...
Superlattices and Microstructures 40 (4-6), 205-213, 2006
36 2006