| Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition JE Brom, Y Ke, R Du, D Won, X Weng, K Andre, JC Gagnon, SE Mohney, ... Applied Physics Letters 100 (16), 2012 | 57 | 2012 |
| UV-cured gel polymer electrolytes with improved stability for advanced aqueous Li-ion batteries SA Langevin, B Tan, AW Freeman, JC Gagnon, CM Hoffman, MW Logan, ... Chemical Communications 55 (87), 13085-13088, 2019 | 41 | 2019 |
| An untethered soft robot based on liquid crystal elastomers JM Boothby, JC Gagnon, E McDowell, T Van Volkenburg, L Currano, ... Soft robotics 9 (1), 154-162, 2022 | 37 | 2022 |
| The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si (111) substrates JC Gagnon, JM Leathersich, FS Shahedipour-Sandvik, JM Redwing Journal of crystal growth 393, 98-102, 2014 | 10 | 2014 |
| A pathway to compound semiconductor additive manufacturing JC Gagnon, M Presley, NQ Le, TJ Montalbano, S Storck MRS Communications 9 (3), 1001-1007, 2019 | 7 | 2019 |
| Gallium Nitride Growth on Silicon JA Robinson, JM Redwing, LP Sadwick, JC Gagnon US Patent App. 15/529,118, 2017 | 7 | 2017 |
| In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates JC Gagnon, M Tungare, X Weng, JM Leathersich, F Shahedipour-Sandvik, ... Journal of electronic materials 41, 865-872, 2012 | 7 | 2012 |
| Role of substrate temperature and tellurium flux on the electrical and optical properties of MBE grown GeTe and Sb2Te3 thin films on GaAs (100) A Podpirka, J Gagnon, C Zgrabik, J Pierce, D Shrekenhamer Journal of Vacuum Science & Technology B 38 (3), 2020 | 4 | 2020 |
| Heteroepitaxial growth of GaN on vertical Si {110} sidewalls formed on trench-etched Si (001) substrates JC Gagnon, H Shen, Y Yuwen, K Wang, TS Mayer, JM Redwing Journal of Crystal Growth 446, 1-6, 2016 | 3 | 2016 |
| Renzhong Du, Dongjin Won, Xiaojun Weng, Kalissa Andre, Jarod C. Gagnon, Suzanne E. Mohney, Qi Li, Ke Chen, XX Xi, and Joan M. Redwing JE Brom, Y Ke Appl. Phys. Lett 100, 162110, 2012 | 3 | 2012 |
| Molecular beam epitaxy growth of low-bandgap material thick films using a molybdenum disilicide coated backing plate for substrate temperature control A Podpirka, M Brupbacher, C Zgrabik, JC Gagnon, D Shrekenhamer Journal of Vacuum Science & Technology B 39 (1), 2021 | 1 | 2021 |
| Evaluation and Mitigation of Impurities in Additively Manufactured Epitaxial Gallium Nitride MA Berkson, EA Pogue, ME Bartlett, SA Shuler, MM Kesavan, ... Crystal Growth & Design, 2024 | | 2024 |
| Apparatus for printing wide bandgap semiconductor materials JC Gagnon, MJ Presley, SM Storck, JP Maranchi US Patent App. 18/368,662, 2024 | | 2024 |
| Method for printing wide bandgap semiconductor materials JC Gagnon, MJ Presley, SM Storck, JP Maranchi, KA Ohiri, SA Shuler US Patent 11,823,900, 2023 | | 2023 |
| Quilted insulating diving glove MH Jin, ED Jacque, JC Gagnon, NJ Fairbanks, DP Seker, K Bontje, ... US Patent App. 18/091,499, 2023 | | 2023 |
| Method for printing wide bandgap semiconductor materials JC Gagnon US Patent 11,056,338, 2021 | | 2021 |
| MOCVD growth of GaN on Si through novel substrate modification techniques JC Gagnon | | 2014 |
| ETCH RATE AND GEOMETRY FOR ETCHED Si (001) SUBSTRATES FOR SUBSEQUENT GaN FILM GROWTH S Williams, J Gagnon, J Redwing Annual Research Journal, 141, 2013 | | 2013 |
| Hybrid Physical-Chemical Vapor Deposition of Bi2Se3 Thin films on Sapphire J Brom, Y Ke, R Du, J Gagnon, Q Li, J Redwing APS March Meeting Abstracts 2012, D31. 004, 2012 | | 2012 |
| Fracture Mechanics and Origin Determination of SiC Tiles for Armor Applications JC Gagnon Alfred University, 2009 | | 2009 |
