Joël Eymery
Joël Eymery
UGA, CEA, IRIG-MEM, Nanostructure and X-Ray Radiation Lab. (HDR, Dr Res. CEA, Senior Expert)
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Citado por
Citado por
Nanowire-based one-dimensional electronics
C Thelander, P Agarwal, S Brongersma, J Eymery, LF Feiner, A Forchel, ...
Materials today 9 (10), 28-35, 2006
Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
R Köster, JS Hwang, C Durand, DLS Dang, J Eymery
Nanotechnology 21 (1), 015602, 2009
M-plane core–shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices
R Koester, JS Hwang, D Salomon, X Chen, C Bougerol, JP Barnes, ...
Nano letters 11 (11), 4839-4845, 2011
Flexible light-emitting diodes based on vertical nitride nanowires
X Dai, A Messanvi, H Zhang, C Durand, J Eymery, C Bougerol, FH Julien, ...
Nano letters 15 (10), 6958-6964, 2015
Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors
M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ...
Nano letters 14 (6), 3515-3520, 2014
Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates
XJ Chen, G Perillat-Merceroz, D Sam-Giao, C Durand, J Eymery
Applied Physics Letters 97 (15), 2010
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
L Mancini, N Amirifar, D Shinde, I Blum, M Gilbert, A Vella, F Vurpillot, ...
The Journal of Physical Chemistry C 118 (41), 24136-24151, 2014
Surface diffusion dewetting of thin solid films: Numerical method and application to Si∕ SiO 2
E Dornel, JC Barbe, F De Crécy, G Lacolle, J Eymery
Physical Review B 73 (11), 115427, 2006
Flexible white light emitting diodes based on nitride nanowires and nanophosphors
N Guan, X Dai, A Messanvi, H Zhang, J Yan, E Gautier, C Bougerol, ...
ACS photonics 3 (4), 597-603, 2016
Ordering of Ge quantum dots with buried Si dislocation networks
F Leroy, J Eymery, P Gentile, F Fournel
Applied physics letters 80 (17), 3078-3080, 2002
Accurate control of the misorientation angles in direct wafer bonding
F Fournel, H Moriceau, B Aspar, K Rousseau, J Eymery, JL Rouviere, ...
Applied physics letters 80 (5), 793-795, 2002
Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
V Favre-Nicolin, F Mastropietro, J Eymery, D Camacho, YM Niquet, ...
New Journal of Physics 12 (3), 035013, 2010
Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features
TP Ernst, F Andrieu, O Weber, JM Hartmann, C Dupre, O Faynot, ...
ECS Transactions 3 (7), 947, 2006
Flexible photodiodes based on nitride core/shell p–n junction nanowires
H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ...
ACS applied materials & interfaces 8 (39), 26198-26206, 2016
Inversion domain boundaries in GaN wires revealed by coherent Bragg imaging
S Labat, MI Richard, M Dupraz, M Gailhanou, G Beutier, M Verdier, ...
ACS nano 9 (9), 9210-9216, 2015
X-ray scattering study of hydrogen implantation in silicon
N Sousbie, L Capello, J Eymery, F Rieutord, C Lagahe
Journal of applied physics 99 (10), 2006
Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN …
L Rigutti, I Blum, D Shinde, D Hernández-Maldonado, W Lefebvre, ...
Nano letters 14 (1), 107-114, 2014
Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy
A Bugallo, L Rigutti, G Jacopin, FH Julien, C Durand, XJ Chen, ...
Applied Physics Letters 98 (23), 2011
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ...
Applied Physics Letters 105 (13), 2014
Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells
G Jacopin, ADL Bugallo, P Lavenus, J Lorenzo Rigutti, François H., ...
APPLIED PHYSICS EXPRESS 5 (1), 014101, 2012
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