Juan A. López-Villanueva
Juan A. López-Villanueva
Catedrático de Tecnología Electrónica, Universidad de Granada
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Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures
A Palma, A Godoy, JA Jimenez-Tejada, JE Carceller, ...
Physical Review B 56 (15), 9565, 1997
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
Design and characterization of a low thermal drift capacitive humidity sensor by inkjet-printing
A Rivadeneyra, J Fernández-Salmerón, M Agudo, JA López-Villanueva, ...
Sensors and Actuators B: Chemical 195, 123-131, 2014
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's
F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998
A comprehensive model for Coulomb scattering in inversion layers
F Gámiz, JA López‐Villanueva, JA Jiménez‐Tejada, I Melchor, A Palma
Journal of applied physics 75 (2), 924-934, 1994
Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
Evaluation of a low-cost commercial mosfet as radiation dosimeter
LJ Asensio, MA Carvajal, JA López-Villanueva, M Vilches, AM Lallena, ...
Sensors and Actuators A: Physical 125 (2), 288-295, 2006
Effects of the inversion layer centroid on MOSFET behavior
JA Lopez-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
Direct and trap-assisted elastic tunneling through ultrathin gate oxides
F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva
Journal of Applied Physics 91 (8), 5116-5124, 2002
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
Universality of electron mobility curves in MOSFETs: A Monte Carlo study
F Gamiz, JA López-Villanueva, J Banqueri, JE Carceller, P Cartujo
IEEE transactions on electron devices 42 (2), 258-265, 1995
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs
JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller
Journal of applied physics 80 (9), 5121-5128, 1996
Modeling effects of electron-velocity overshoot in a MOSFET
JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller
IEEE Transactions on Electron Devices 44 (5), 841-846, 1997
Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory
S Rodrıguez, JA López-Villanueva, I Melchor, JE Carceller
Journal of applied physics 86 (1), 438-444, 1999
A simple subthreshold swing model for short channel MOSFETs
A Godoy, JA López-Villanueva, JA Jiménez-Tejada, A Palma, F Gámiz
Solid-State Electronics 45 (3), 391-397, 2001
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F Gamiz, JB Roldan, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas
JA Lo, I Melchor, P Cartujo, JE Carceller
Physical Review B 48 (3), 1626, 1993
A model for the quantized accumulation layer in metal-insulator-semiconductor structures
JA López-Villanueva, I Melchor, F Gámiz, J Banqueri, JA Jiménez-Tejada
Solid-state electronics 38 (1), 203-210, 1995
Analysis of the effects of constant‐current Fowler–Nordheim‐tunneling injection with charge trapping inside the potential barrier
JA Lopez‐Villanueva, JA Jimenez‐Tejada, P Cartujo, J Bausells, ...
Journal of applied physics 70 (7), 3712-3720, 1991
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