Seguir
Ji Hyun Kim
Ji Hyun Kim
Dirección de correo verificada de ncsu.edu
Título
Citado por
Citado por
Año
Colossal permittivity and low losses in Ba1–xSrxTiO3–δ reduced nanoceramics
S Dupuis, S Sulekar, JH Kim, H Han, P Dufour, C Tenailleau, JC Nino, ...
Journal of the European Ceramic Society 36 (3), 567-575, 2016
322016
Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire
A Bansal, M Hilse, B Huet, K Wang, A Kozhakhmetov, JH Kim, S Bachu, ...
ACS Applied Materials & Interfaces 13 (45), 54516-54526, 2021
232021
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
S Washiyama, KJ Mirrielees, P Bagheri, JN Baker, JH Kim, Q Guo, ...
Applied Physics Letters 118 (4), 042102, 2021
222021
Internal barrier layer capacitor, nearest neighbor hopping, and variable range hopping conduction in Ba 1− x Sr x TiO 3− δ nanoceramics
S Sulekar, JH Kim, H Han, P Dufour, C Tenailleau, JC Nino, E Cordoncillo, ...
Journal of Materials Science 51 (16), 7440-7450, 2016
142016
Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
P Reddy, Z Bryan, I Bryan, JH Kim, S Washiyama, R Kirste, S Mita, ...
Applied Physics Letters 116 (3), 032102, 2020
132020
Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
P Reddy, D Khachariya, W Mecouch, MH Breckenridge, P Bagheri, ...
Applied Physics Letters 119 (18), 182104, 2021
122021
Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN
P Bagheri, P Reddy, JH Kim, R Rounds, T Sochacki, R Kirste, ...
Applied Physics Letters 117 (8), 082101, 2020
122020
On the Ge shallow-to-deep level transition in Al-rich AlGaN
P Bagheri, P Reddy, S Mita, D Szymanski, JH Kim, Y Guan, D Khachariya, ...
Journal of Applied Physics 130 (5), 055702, 2021
72021
Effect of Reduced Atmosphere Sintering on Blocking Grain Boundaries in Rare-Earth Doped Ceria
S Sulekar, M Mehr, JH Kim, JC Nino
Inorganics 9 (8), 63, 2021
42021
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
JH Kim, P Bagheri, S Washiyama, A Klump, R Kirste, S Mita, P Reddy, ...
Applied Physics Letters 119 (2), 022101, 2021
2021
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–10