| SiC power devices operation from cryogenic to high temperature: investigation of various 1.2 kV SiC power devices T Chailloux, C Calvez, N Thierry-Jebali, D Planson, D Tournier Materials Science Forum 778, 1122-1125, 2014 | 28 | 2014 |
| Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes N Thierry-Jebali, J Hassan, M Lazar, D Planson, E Bano, A Henry, ... Applied Physics Letters 101 (22), 2012 | 25 | 2012 |
| Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers N Thierry-Jebali, C Kawahara, T Miyazawa, H Tsuchida, T Kimoto AIP Advances 5 (3), 2015 | 17 | 2015 |
| Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport N Thierry-Jebali, A Vo-Ha, D Carole, M Lazar, G Ferro, D Planson, ... Applied Physics Letters 102 (21), 2013 | 17 | 2013 |
| TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon F Cayrel, O Ménard, A Yvon, N Thierry‐Jébali, C Brylinsky, E Collard, ... physica status solidi (a) 209 (6), 1059-1066, 2012 | 11 | 2012 |
| Low temperature (down to 450° C) annealed TiAl contacts on N‐type gallium nitride characterized by differential scanning calorimetry N Thierry‐Jebali, O Menard, R Chiriac, E Collard, C Brylinski, F Cayrel, ... physica status solidi c 8 (2), 447-449, 2011 | 8 | 2011 |
| Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier H Elahipanah, N Thierry-Jebali, SA Reshanov, W Kaplan, A Zhang, ... Materials Science Forum 897, 455-458, 2017 | 7 | 2017 |
| 600 V PiN diodes fabricated using on-axis 4H silicon carbide G Civrac, F Laariedh, N Thierry-Jebali, M Lazar, D Planson, P Brosselard, ... Materials Science Forum 717, 969-972, 2012 | 7 | 2012 |
| Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport A Vo-Ha, D Carole, M Lazar, D Tournier, F Cauwet, V Soulière, ... Thin solid films 548, 125-129, 2013 | 6 | 2013 |
| Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport N Thierry-Jebali, M Lazar, A Vo Ha, D Carole, V Soulière, F Laariedh, ... Materials Science Forum 740, 911-914, 2013 | 6 | 2013 |
| Investigations on the Origin of the Ohmic Behavior for Ti/Al based Contacts on n-type GaN N Thierry-Jebali, O Ménard, C Dubois, D Tournier, E Collard, C Brylinski, ... Materials Science Forum 711, 208-212, 2012 | 6 | 2012 |
| Caractérisations et modélisations physiques de contacts entre phases métalliques et Nitrure de Gallium semi-conducteur NT Thierry-Jebali Université Claude Bernard-Lyon I, 2011 | 5 | 2011 |
| Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport D Carole, A Vo Ha, A Thomas, M Lazar, N Thierry-Jebali, D Tournier, ... Materials Science Forum 740, 177-180, 2013 | 4 | 2013 |
| Growth mechanism during selective epitaxy of p-doped SiC using VLS transport D Carole, A Vo-Ha, M Lazar, N Thierry-Jebali, D Tournier, P Brosselard, ... MRS Online Proceedings Library (OPL) 1433, mrss12-1433-h04-07, 2012 | 4 | 2012 |
| Concept for silicon carbide power devices A Schöner, N Thierry-jebali, C Vieider, S Reshanov, H Elahipanah, ... US Patent 11,276,681, 2022 | 3 | 2022 |
| Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of … N Thierry-Jebali, M Lazar, A Vo-Ha, D Carole, V Soulière, A Henry, ... Materials Science Forum 778, 639-644, 2014 | 3 | 2014 |
| Active Devices for Power Electronics: SiC vs III-N Compounds–The Case of Schottky Rectifiers C Brylinski, O Ménard, N Thierry-Jebali, F Cayrel, D Alquier Materials Science Forum 645, 879-884, 2010 | 3 | 2010 |
| Feeder design with high current capability H Elahipanah, N Thierry-jebali, A Schöner, S Reshanov US Patent 11,575,007, 2023 | 1 | 2023 |
| Feeder design with high current capability H Elahipanah, N Thierry-jebali, A Schöner, S Reshanov US Patent 11,158,706, 2021 | 1 | 2021 |
| Integration of a Schottky diode with a MOSFET N Thierry-jebali, H Elahipanah, A Schöner, S Reshanov US Patent 11,114,557, 2021 | 1 | 2021 |
