Federico Nardi
Title
Cited by
Cited by
Year
Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling
S Larentis, F Nardi, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 59 (9), 2468-2475, 2012
4092012
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
D Ielmini, F Nardi, C Cagli
Nanotechnology 22 (25), 254022, 2011
2312011
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
C Cagli, D Ielmini, F Nardi, AL Lacaita
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1962008
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
D Ielmini, F Nardi, C Cagli
Applied Physics Letters 96 (5), 053503, 2010
1712010
Resistive switching by voltage-driven ion migration in bipolar RRAM—Part I: Experimental study
F Nardi, S Larentis, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 59 (9), 2461-2467, 2012
1572012
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
D Ielmini, F Nardi, C Cagli
IEEE Transactions on Electron Devices 58 (10), 3246-3253, 2011
1442011
Modeling of set/reset operations in NiO-based resistive-switching memory devices
C Cagli, F Nardi, D Ielmini
IEEE Transactions on electron devices 56 (8), 1712-1720, 2009
1322009
Resistance transition in metal oxides induced by electronic threshold switching
D Ielmini, C Cagli, F Nardi
Applied Physics Letters 94 (6), 063511, 2009
1312009
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
Solid-State Electronics 58 (1), 42-47, 2011
1252011
Evidence for voltage-driven set/reset processes in bipolar switching RRAM
D Ielmini, F Nardi, S Balatti
IEEE Transactions on Electron Devices 59 (8), 2049-2056, 2012
1232012
Size-dependent retention time in NiO-based resistive-switching memories
D Ielmini, F Nardi, C Cagli, AL Lacaita
IEEE Electron Device Letters 31 (4), 353-355, 2010
1232010
Spike-timing dependent plasticity in a transistor-selected resistive switching memory
S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini
Nanotechnology 24 (38), 384012, 2013
1112013
Complementary switching in oxide-based bipolar resistive-switching random memory
F Nardi, S Balatti, S Larentis, DC Gilmer, D Ielmini
IEEE transactions on electron devices 60 (1), 70-77, 2012
1112012
Complementary switching in metal oxides: Toward diode-less crossbar RRAMs
F Nardi, S Balatti, S Larentis, D Ielmini
2011 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2011
822011
Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires
C Cagli, F Nardi, B Harteneck, Z Tan, Y Zhang, D Ielmini
Small 7 (20), 2899-2905, 2011
742011
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
D Ielmini, S Spiga, F Nardi, C Cagli, A Lamperti, E Cianci, M Fanciulli
Journal of Applied Physics 109 (3), 034506, 2011
712011
Filament diffusion model for simulating reset and retention processes in RRAM
S Larentis, C Cagli, F Nardi, D Ielmini
Microelectronic Engineering 88 (7), 1119-1123, 2011
572011
Nanowire-based resistive switching memories: devices, operation and scaling
D Ielmini, C Cagli, F Nardi, Y Zhang
Journal of Physics D: Applied Physics 46 (7), 074006, 2013
552013
Switching of nanosized filaments in NiO by conductive atomic force microscopy
F Nardi, D Deleruyelle, S Spiga, C Muller, B Bouteille, D Ielmini
Journal of Applied Physics 112 (6), 064310, 2012
412012
Sub-10 ľA reset in NiO-based resistive switching memory (RRAM) cells
F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
2010 IEEE International Memory Workshop, 1-4, 2010
212010
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Articles 1–20